Controllable step-flow growth of GaN on patterned freestanding substrate  

作　　者：Peng Wu Jianping Liu Lei Hu Xiaoyu Ren Aiqin Tian Wei Zhou Fan Zhang Xuan Li Masao Ikeda Hui Yang 

机构地区：[1]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [3]Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201210,China [4]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第2期46-50,共5页半导体学报（英文版）

基　　金：This work was supported by the National Key Research and Development Program of China(2022YFB2802801);the National Natural Science Foundation of China(61834008,U21A20493);the Key Research and Development Program of Jiangsu Province(BE2020004,BE2021008-1);the Suzhou Key Laboratory of New-type Laser Display Technology(SZS2022007).

摘　　要：A new kind of step-flow growth mode is proposed,which adopts sidewall as step source on patterned GaN substrate.The terrace width of steps originated from the sidewall was found to change with the growth temperature and ammonia flux.The growth mechanism is explained and simulated based on step motion model.This work helps better understand the behaviors of step advancement and puts forward a method of precisely modulating atomic steps.

关 键 词：step-flow growth GAN terrace width step motion 

分 类 号：TN386[电子电信—物理电子学]