SiC MOSFET高温栅氧可靠性研究  

Investigation on Reliability of High-temperature Gate Oxide in SiC MOSFET

作　　者：刘建君 陈宏[2] 丁杰钦 白云[2] 郝继龙 韩忠霖 LIU Jianjun;CHEN Hong;DING Jieqin;BAI Yun;HAO Jilong;HAN Zhonglin(School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Zhuzhou CRRC Times Semiconductor Co.,Ltd,Zhuzhou 412001,China)

机构地区：[1]中国科学院大学微电子学院,北京100049 [2]中国科学院微电子研究所,北京100029 [3]株洲中车时代半导体有限公司,株洲412001

出　　处：《电源学报》2024年第1期147-152,共6页Journal of Power Supply

基　　金：国家重点研发计划资助项目(2016YFB0400404)。

摘　　要：碳化硅SiC(silicon carbide)具有优良的电学和热学特性,是一种前景广阔的宽禁带半导体材料。SiC材料制成的功率MOSFET(metal-oxide-semiconductor field-effect transistor)非常适合应用于大功率领域,而高温栅氧可靠性是大功率MOSFET最需要关注的特性之一。通过正压高温栅偏试验和负压高温栅偏试验对比了自研SiC MOSFET和国外同规格SiC MOSFET的高温栅氧可靠性。负压高温栅偏试验结果显示自研SiC MOSFET与国外SiC MOSFET的阈值电压偏移量基本相等,阈值电压偏移量百分比最大相差在4.52%左右。正压高温栅偏试验的结果显示自研SiC MOSFET的阈值电压偏移量较小,与国外SiC MOSFET相比,自研SiC MOSFET的阈值电压偏移量百分比最大相差11%。自研器件占优势的原因是在SiC/SiO2界面处引入了适量的氮元素,钝化界面缺陷的同时,减少了快界面态的产生,使总的界面态密度被降到最低。Silicon carbide(SiC)is a promising wide-bandgap semiconductor material owing to its excellent electrical and thermal characteristics.Power metal-oxide-semiconductor field-effect transistors(MOSFETs)based on SiC are suitable for high-power fields,and their high-temperature gate oxide reliability is one of the most concerned characteristics.In this paper,the high-temperature gate oxide reliability of self-developed SiC MOSFETs is compared with that of the foreign SiC MOSFETs of the same specification by positive and negative high-temperature gate bias(HTGB)tests.The negative HTGB test results show that the deviation of threshold voltage of self-developed SiC MOSFETs is almost equal to that of the foreign SiC MOSFETs,and the maximum discrepancy between them is about 4.52%.However,the positive HTGB test results show that the deviation of threshold voltage of self-developed SiC MOSFETs is smaller than that of the foreign SiC MOSFETs,with a maximum discrepancy of 11%.The reason for the better performance of self-developed devices is that an appropriate amount of nitrogen is added to the SiC/SiO2 interface,which can passivate interface defects and reduce the generation of fast interface states,so that the total interface state density is minimized.

关 键 词：SiC MOSFET 可靠性 栅氧 高温栅偏 

分 类 号：TM56[电气工程—电器]