一种低压高PSRR电流模带隙基准电压源的设计  

Design of A Low Voltage High PSRR Current-Mode Bandgap Voltage Reference

作　　者：杨艳军 张成彬[2] 陈鸣 贺娟 YANG Yanjun;ZHANG Chengbin;CHEN Ming;HE Juan(School of Physics and Electronic Science,Zunyi Normal University,Guizhou 563006,China;Institute of Microelectronics of Chinese Academy of Science,Beijing 100029,China)

机构地区：[1]遵义师范学院物理与电子科学学院,贵州563006 [2]中国科学院微电子研究所,北京100029

出　　处：《集成电路应用》2024年第1期30-32,共3页Application of IC

基　　金：贵州省科技厅基础研究计划项目(黔科合基础-ZK[2021]一般330)。

摘　　要：阐述一种改进型电流模带隙基准,通过改变传统结构中电流镜的比例,显著地提高了基准电压的PSRR。采用55nm CMOS工艺同时设计了这两种带隙基准电路,电源电压均为1.2V,输出基准电压为0.6V。Cadence仿真结果表明,传统电流模带隙基准和改进型电流模带隙基准在10Hz的PSRR分别为-63.7dB和-129.4dB,在-40~125℃的温度范围内,其温度系数分别为10.4ppm/℃和19.5ppm/℃。This paper describes an improved current-mode bandgap reference.By changing the proportion of current mirror in the traditional current-mode bandgap,the PSRR of the reference voltage is improved significantly.Both the traditional and the improved bandgap reference circuits are designed using 55nm CMOS process.The supply voltage is 1.2V,and the output reference voltage is 0.6V.Cadence post-simulation results show that the PSRR of traditional and improved current-mode bandgap reference are-63.7dB and-129.4dB at 10Hz,and the temperature coefficients are 10.4 ppm/℃ and 19.5 ppm/℃ in the temperature range of-40℃ to 125℃,respectively.

关 键 词：电子器件 带隙基准 电源抑制比 电流模式 温度系数 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN432