共焦式磁控溅射设备研制及工艺验证  

Development and Process Validation of Confocal Magnetron Sputtering Equipment

作　　者：黄也 何秋福 石任凭 龚俊 王建青 肖晓雨 尹联民 佘鹏程 HUANG Ye;HE Qiufu;SHI Renping;GONG Jun;WANG Jianqing;XIAO Xiaoyu;SHE Pengcheng(The 48th Research Institute of CETC,Changsha 410111,China)

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111

出　　处：《电子工业专用设备》2023年第6期41-46,共6页Equipment for Electronic Products Manufacturing

摘　　要：通过分析InP基激光器和探测器芯片电极金属薄膜工艺需求与特性,采用多靶共焦结构,多梯度真空等设计优化了专用磁控溅射系统,实现晶圆复合膜层沉积,晶圆台面或沟槽图形良好的覆盖性。针对标准100 mm(4英寸)InP基片的生产需求,满足100 mm片剥离工艺的低温溅射成膜要求设计工艺试验。实验结果表明,所沉积的金属薄膜均匀性优于5%,台阶覆盖比大于0.3,满足InP基晶圆薄膜沉积和表面覆盖层制备工艺需求。Through the analysis of InP-based lasers and detector chip electrode metal thin film process needs and characteristics,the use of multi-target confocal structure,multi-gradient vacuum,and other design optimization of the special magnetron sputtering system,to achieve the wafer composite film layer deposition,wafer table or trench graphics good coverage.For standard 100 mm(4-inch)InP substrate production needs to meet 100 mm wafer stripping process of low temperature sputtering film formation requirements design process test.Experimental results show that the uniformity of the deposited metal film is better than 5%,the step coverage ratio is greater than 0.3,to meet the InP-based wafer film deposition and surface coverage layer preparation process requirements.

关 键 词：磁控溅射 多靶共焦 多梯度真空 均匀性 台阶覆盖比 

分 类 号：TN304.05[电子电信—物理电子学]