国产碳化硅离子注入机的设计开发  

Design and Development of Domestic SiC Ion Implanter

作　　者：袁卫华 李进 罗才旺 许波涛 YUAN Weihua;LI Jin;LUO Caiwang;XU Botao(The 48th Research Institute of CETC,Changsha 410111,China)

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111

出　　处：《电子工业专用设备》2024年第1期38-42,共5页Equipment for Electronic Products Manufacturing

摘　　要：为进一步增加SiC离子注入技术的自主可控能力和降低SiC器件的成本,SiC离子注入机的国产替代迫在眉睫。主要介绍国产SiC离子注入机的研制过程和其中的三大关键技术,目前国产SiC离子注入机核心技术攻关已取得突破并得到产线应用,器件良品率、性能等指标与国外进口机台的水平相当,能够满足SiC器件的生产要求。In order to further increase the autonomous control capability of SiC ion implanting technology and reduce the cost of SiC devices,the domestic replacement of SiC ion implanter is imminent.This paper mainly introduces the development process and the key technologies of domestic SiC ion implanter.At present,the core technology of domestic SiC ion implanter has made a breakthrough and been applied in the production line.The device yield,performance and other indicators are equivalent to the level of foreign imported machines,could meet the requirements of SiC device production.

关 键 词：碳化硅 高能离子注入机 金属离子源 高温注入 

分 类 号：TN305.3[电子电信—物理电子学]