含丙二醇的复合有机抑制剂应用于TSV镀铜工艺的研究  

Study on application of a propylene glycol-containing organic composite inhibitor in copper electroplating of through-silicon via

作　　者：史筱超 于仙仙 王溯 SHI Xiaochao;YU Xianxian;WANG Su(Shanghai Key Laboratory of IC Process Materials,Shanghai 201616,China;Shanghai Sinyang Semiconductor Materials Co.,Ltd.,Shanghai 201616,China)

机构地区：[1]上海市集成电路关键工艺材料重点实验室,上海201616 [2]上海新阳半导体材料股份有限公司,上海201616

出　　处：《电镀与涂饰》2024年第1期43-49,共7页Electroplating & Finishing

摘　　要：[目的]硅通孔(TSV)电镀铜填充一般采用PEG(聚乙二醇)类有机化合物抑制剂,但往往存在电镀时间长、易产生空洞、面铜较厚、退火后晶界间缺陷多等问题。[方法]开发了一种新型含丙二醇的复合有机抑制剂,研究了采用它时的TSV填充模式,退火后孔内镀层的结晶状态,以及镀层的杂质含量。[结果]该抑制剂对TSV的填充效果明显优于传统抑制剂,与小分子含硫化合物加速剂复配使用时可实现“自下而上”的均匀填充,且面铜平整,无微孔、气泡等缺陷存在。[结论]该复合有机抑制剂具有很好的工业化应用潜力。[Introduction]PEG(polyethylene glycol)-containing organic compounds are usually used as the inhibitor for through-silicon via(TSV)filling by electroplating with copper,which often has problems such as long electroplating time,easy formation of voids,too thick copper coating outside the via,and formation of many defects between grain boundaries after annealing.[Method]A composite organic inhibitor containing propylene glycol was developed.The TSV filling mode by electroplating with this novel inhibitor,crystallization of copper coating inside the via after being annealed,and content of impurities in copper coating were studied.[Result]The filling efficiency of TSV when using the novel inhibitor was much better than that using the traditional PEG-based inhibitor.When combined with small-molecule sulfur-containing compound as accelerator,the TSV could be filled uniformly from bottom to top,and the copper coating deposited outside the via was smooth without any micropores and blisters.[Conclusion]The given inhibitor has a good industrial application potential.

关 键 词：硅通孔 电镀铜 丙二醇 有机抑制剂 自下而上填充 

分 类 号：TQ153.14[化学工程—电化学工业]