Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO  

作　　者：Shiyang LU Xiaobai NING Hongchao ZHANG Sixi ZHEN Xiaofei FAN Danrong XIONG Dapeng ZHU Gefei WANG Hong-Xi LIU Kaihua CAO Weisheng ZHAO 

机构地区：[1]Fert Beijing Institute,School of Integrated Science and Engineering,Beihang University,Beijing 100191,China [2]Truth Memory Corporation,Beijing 100089,China

出　　处：《Science China(Information Sciences)》2024年第1期312-313,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Program of China (Grant Nos.2022YFB4400200,2021YFB3601303,2021YFB3601304,2021YFB3601300);National Natural Science Foundation of China (Grant Nos.62001014,92164206)。

摘　　要：Spin-orbital torque (SOT) based three-terminal magnetic tunnel junctions (MTJs) have attracted much interest as the next generation magnetic random-access memory (MRAM)key device both in the academy and the industry.This is because SOT-MTJs feature high endurance and fast switching speed,benefiting tremendously from the separation of read/write current paths and less incubation time during the write in contrast to the spin-transfer torque (STT) MTJs [1].

关 键 词：TORQUE interface WRITE 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]