星用微波集成电路TaN薄膜电阻的功率耐受值研究  

Research on the power tolerance value of TaN thin-film resistors

作　　者：张楠[1] 王平[1] 杨钊[1] ZHANG Nan;WANG Ping;YANG Zhao(China Academy of Space Technology(Xi’an),Xi’an 710000,China)

机构地区：[1]中国空间技术研究院西安分院,西安710000

出　　处：《空间电子技术》2024年第1期33-38,共6页Space Electronic Technology

基　　金：国家重点实验室基金项目(编号:6142411552214)。

摘　　要：氮化钽(tantalum nitride,TaN)薄膜电阻电路是星载放大器、功分器等典型产品中必不可少的组成部分。在较大功率信号施加的条件下,TaN埋嵌电阻部位热效应较强,出现电路失效或烧毁的可能性也较其他部位大。星载微波单机应用环境条件恶劣,对于薄膜电阻的应用可靠性要求极高,常规侧重高温工况,热处理等条件下的氮化钽电阻功率耐受性研究无法得到实际星载应用工况中氮化钽电阻的功率特性,势必需要通过模拟实际应用工况和边界条件,通过设计制作氧化铝基板上不同尺寸TaN薄膜电阻样件,测量在施加不同电流的工况下电阻表面和电阻电极的温度,并根据电阻表面最大允许温升对应的电流,计算出可耐受的最大功率,完成了TaN薄膜电阻的功率耐受性研究。研究结果表明,在基板厚度一定时,随着电阻面积增大,薄膜电阻耐受功率呈增大趋势;较大尺寸薄膜电阻的功率耐受随着基板厚度的增加而降低。此研究结果对后续优化星用微波电路设计,提高宇航微波产品应用可靠性,减少不必要的设计冗余,有重要意义。Tantalum nitride thin-film resistors are an essential component in typical products such as starboard amplifiers and power dividers.Under the conditions of higher power signal application,the thermal effect of tantalum nitride resistor parts is stronger and the possibility of circuit failure or burnout is greater than other parts.In order to provide a reference value for the power resistance of a tantalum nitride thin-film resistor and to avoid circuit failure,we designed and fabricated actual prototypes containing thin-film resistors of different sizes,tested the temperature of the resistor surface and resistor electrodes under different current application conditions,and calculated the corresponding power based on the current corresponding to the maximum allowable temperature rise of the resistor surface to obtain the power density value of the tantalum nitride thin-film resistor.It is confirmed that the larger the resistive area is at a certain substrate thickness,the higher the power tolerance of the thin-film resistor is;the power tolerance decreases with the increase of the substrate thickness when the size of the thin-film resistor is larger,and other conclusions.The results of this research are of great significance for optimising microwave circuit design,improving the reliability of aerospace microwave products and reducing unnecessary design redundancy.

关 键 词：氮化钽 薄膜电路 功率密度 

分 类 号：V443[航空宇航科学与技术—飞行器设计] V19