Sm^(2+)掺杂AlN纳米线的制备、光致发光及磁性分析  

Preparation,photoluminescence and magnetic analysis of Sm^(2+)doped AlN nanowires

作　　者：杨莉[1] 张玲[2] 王秋实[1] YANG Li;ZHANG Ling;WANG Qiushi(College of Physical Science and Technology,Bohai University,Jinzhou 121013,Liaoning Province,China;Liaoning Geology Engineering Vocational College,Dandong 118000,Liaoning Province,China)

机构地区：[1]渤海大学物理科学与技术学院,辽宁锦州121013 [2]辽宁地质工程职业学院,辽宁丹东118000

出　　处：《电子元件与材料》2023年第11期1302-1307,共6页Electronic Components And Materials

基　　金：辽宁省教育厅科学研究项目(LJ2020009)。

摘　　要：采用直流电弧放电法,以Al和Sm_(2)O_(3)的混合粉体与氮气直接反应,成功制备出Sm^(2+)掺杂AlN纳米线。通过X射线衍射(XRD)、拉曼光谱(Raman)、X射线光电子能谱(XPS)、能量色散光谱仪(EDS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)对纳米线的组成和形貌进行了分析。结果显示,纳米线的直径为50~200 nm,Sm^(2+)离子以二价形式成功掺入AlN晶格而不改变AlN晶格结构。Sm^(2+)掺杂AlN纳米线表现出与Sm^(2+)离子4f能级的跃迁相对应的发射峰和室温铁磁性,表明其在光电子和自旋电子微/纳米器件领域具有潜在的应用价值。The Sm^(2+)doped AlN nanowires were successfully prepared by the direct reaction of Al and Sm_(2)O_(3) mixed powders with nitrogen using the direct current arc discharge method.The composition and morphology of nanowires were analyzed by X-ray diffraction(XRD),Raman spectroscopy(Raman),X-ray photoelectron spectroscopy(XPS),energy dispersive spectroscopy(EDS),scanning electron microscopy(SEM)and transmission electron microscopy(TEM).The results show that the diameter of the nanowires is approximately 50-200 nm,and Sm^(2+)ions are successfully incorporated into the AlN lattice without altering the AlN lattice structure.Sm^(2+)doped AlN nanowire exhibits distinct emission peaks corresponding to 4f electron transitions of Sm^(2+)ions and room temperature ferromagnetism,indicating Sm^(2+)doped AlN nanowires have potential applications in optoelectronic and spintronic micro/nano devices.

关 键 词：氮化铝 掺杂 光致发光 室温铁磁性 直流电弧 

分 类 号：O471.4[理学—半导体物理]