钌基阻挡层铜膜CMP中E1310P的缓蚀机理研究  

Corrosion inhibition mechanism of E1310P in ruthenium based barrier copper film CMP

作　　者：孙纪元 周建伟 罗翀 王辰伟 李丁杰 SUN Jiyuan;ZHOU Jianwei;LUO Chong;WANG Chenwei;LI Dingjie(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《电子元件与材料》2023年第11期1362-1369,1383,共9页Electronic Components And Materials

基　　金：国家自然科学基金(62074049)。

摘　　要：为了控制钌(Ru)基阻挡层铜膜(Cu)化学机械平坦化(CMP)的平坦化效果和表面质量,使用一种绿色无毒的阴离子表面活性剂异构十三醇聚氧乙烯醚磷酸酯(E1310P)作为抛光液的缓蚀剂。研究了E1310P对Cu/Ru去除速率(RR)、静态腐蚀速率(SER)和表面质量的影响。去除速率和静态腐蚀速率显示:E1310P能控制Cu和Ru的去除速率,同时能保持较高的Cu/Ru去除速率选择比。表面质量结果显示:E1310P的加入对表面粗糙度、碟形坑和蚀坑都有良好的控制效果。通过电化学实验和X射线光电子能谱分析其缓蚀机理:随着E1310P浓度提高,E1310P通过物理化学混合吸附的方式吸附于Cu表面,隔离Cu和抛光液的接触,抑制Cu的化学反应,从而实现对Cu的缓蚀效果。In order to control the planarization effect and surface quality of ruthenium(Ru)based barrier layer copper film(Cu)in chemical mechanical planarization(CMP),a green and non-toxic anionic surfactant,heterotridecyl alcohol polyoxyethylene ether phosphate(E1310P),was used as the corrosion inhibitor for the slurry.The effects of E1310P on Cu/Ru removal rate(RR),static erosion rate(SER),and surface quality were studied.The removal rate and static corrosion rate show that E1310P could control the removal rate of Cu and Ru,while maintaining a high Cu/Ru removal rate selection ratio.The surface quality results show that the addition of E1310P has a good control effect on surface roughness,dishing,and erosion.The corrosion inhibition mechanism was investigated with electrochemical experiments and X-ray photoelectron spectroscopy analysis,as the concentration of E1310P increases,E1310P is adsorbed on the surface of Cu through physical and chemical mixed adsorption,leading to the isolation between Cu and polishing solution and inhibition of the chemical reaction of Cu,and the corrosion inhibition effect on Cu was achieved.

关 键 词：化学机械平坦化(CMP) 异构十三醇聚氧乙烯醚磷酸酯(E1310P) 电化学阻抗谱(EIS) 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]