High-breakdown-voltage(>3000 V)and low-power-dissipation Al_(0.3)Ga_(0.7)N/GaN/Al_(0.1)Ga_(0.9)N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al_(2)O_(3)/SiO_(2) passivation  

作　　者：Yutong FAN Xi LIU Ren HUANG Yu WEN Weihang ZHANG Jincheng ZHANG Zhihong LIU Shenglei ZHAO 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China [2]Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China

出　　处：《Science China(Information Sciences)》2023年第12期293-294,共2页中国科学（信息科学）（英文版）

基　　金：supported in part by National Key Research and Development Program of China (Grant No.2021YFB3601900);Fundamental Research Plan (Grant No.JCKY2020110B010);Key-Area Research and Development Program of Guangdong Province (Grant No.2020B010174001);National Science Fund for Distinguished Young Scholars (Grant No.61925404);Guangdong Basic and Applied Basic Research Foundation (Grant No.2020A1515110316)。

摘　　要：GaN power devices have broad application prospects in fast charging systems,power supplies,data centers,and electric vehicles due to their high critical breakdown field strength,high switching frequency,and high conversion efficiency[1–3].AlGaN/GaN/AlGaN double-heterostructure(DH)high-electron-mobility transistors(HEMTs)have been extensively studied owing to their low leakage current and low off-state power dissipation.

关 键 词：BREAKDOWN HEMTS power 

分 类 号：TN386[电子电信—物理电子学]