基于电化学液膜法腐蚀制备STM钨探针的研究  

Preparation of STM tungsten probe by electrochemical liquid membrane etching

作　　者：马玉麟 丁召 王一[1,2,3] 郭祥 MA Yulin;DING Zhao;WANG Yi;GUO Xiang(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Electronics and Software Technology of Guizhou Province,Guiyang 550025,China;Power Semiconductor Device Reliability Engineering Center of the Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵州贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵州贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵州贵阳550025

出　　处：《贵州科学》2024年第1期90-93,共4页Guizhou Science

基　　金：国家自然科学基金(61564002,11664005);贵州省科学技术基金资助项目(黔科合基础〔2020〕1Y271);贵州大学培育项目(贵大培育〔2019〕58号);半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07))。

摘　　要：高质量的探针是保证扫描隧道显微镜(Scanning Tunneling Microscope,STM)4K分辨率的关键。为得到原子级别的探针,实验基于电化学腐蚀原理,使用垂直液膜法制备钨探针。在制备过程中通过控制变量法,研究了腐蚀电压、液膜下钨丝长度等参数对探针质量的影响,实验发现,当使用2 mol/L的NaOH溶液作为液膜时,最佳腐蚀电压为5 V、最佳液膜下钨丝长度为4 mm。该研究为电化学液膜法腐蚀制备钨探针提供了参考依据。High quality probe is the key to ensure 4K resolution of the scanning tunneling microscope(STM).In order to obtain atomic-scale probe,the tungsten probe was prepared by vertical liquid membrane method based on electrochemical etching principle.The influence of etching voltage and tungsten wire length on the quality of the probe was studied by control variable method.The results showed that,when using 2 mol/L NaOH solution as the liquid membrane,the best etching voltage was 5 V,and the best length of tungsten wire was 4 mm.This study has provided reference for the preparation of tungsten probe by electrochemical liquid membrane etching.

关 键 词：液膜法 钨探针 电化学腐蚀 STM 

分 类 号：O657[理学—分析化学]