基于磁控溅射和电子束蒸发合成Mn-Co-Ni-O薄膜  

Effect of Post-annealing Process on Preferred Orientationand Optical Properties of Magnetron SputteringMn-Co-Ni-O Thin Films

作　　者：赵媛媛 向阳[1] 宋贺伦[2] ZHAO Yuanyuan;XIANG Yang;SONG Helun(School of Opto-Electronic Engineering,Changchun University of Science and Technology,Changchun 130022;Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123)

机构地区：[1]长春理工大学光电工程学院,长春130022 [2]中国科学院苏州纳米技术与纳米仿生研究所,苏州215213

出　　处：《长春理工大学学报（自然科学版）》2024年第1期77-84,共8页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：江苏省碳达峰碳中和科技创新专项(BE2022021);苏州市碳达峰碳中和科技支撑重点专项(ST202219)。

摘　　要：锰钴镍氧(Mn-Co-Ni-O,MCNO)薄膜因为具有优异的负温度系数特性在近年来受到广泛关注,现采用射频磁控溅射和电子束蒸发相结合的方式,在单抛蓝宝石(Al2O3)衬底上制备MCNO薄膜,并采用一系列表征探讨了后道退火(Post Annealing,PA)温度对所制薄膜的微观结构和光学性质的影响。结果表明,随着PA温度的提高,MCNO膜的晶粒尺寸和间隔均呈现增大趋势。X射线光电子能谱结果表明,Mn3+/Mn4+的比例随着温度的升高而增大。电学和光学特性研究表明,在PA温度为850℃,条件为空气退火1 h得到的MCNO薄膜在温度范围为220~300 K范围内符合VRH模型,TCR系数良好,激活能为0.32 eV,薄膜在红外可见波段具有较高吸收率。Mn-Co-Ni-O(MCNO)thin film has attracted extensive attention in recent years because of its excellent negative temperature coefficient characteristics.MCNO thin films is now prepared on a single-throw sapphire(Al2O3)substrate by a combination of radio frequency magnetron sputtering and electron beam evaporation.A series of characterizations were used to investigate the influence of Post Annealing(PA)temperature on the microstructure and optical properties of the prepared thin films.The grain size and spacing of MCNO films increase following the rise of PA temperature.X-ray photoelectron spectroscopy results show that the ratio of Mn3+/Mn4+increases with the temperature.The study of electrical and optical properties indicates that the MCNO film obtained by air annealing for 1 hour at the PA temperature of 850℃conforms to the VRH model in the temperature range of 220~300 K with good TCR coefficient and activation energy of 0.32 eV.The MCNO thin film also has a high absorption rate in the infrared visible band.

关 键 词：MCNO薄膜 射频磁控溅射 电子束蒸发 后退火工艺 X射线光电子能谱 

分 类 号：TN215[电子电信—物理电子学]