0.25μm发射极InP DHBT材料生长与器件性能研究  

Study on Epitaxial and Device Properties of 0.25μm Emitter InP DHBT

作　　者：马奔 于海龙 戴姜平 王伟 高汉超[1,2] 李忠辉 MA Ben;YU Hailong;DAI Jiangping;WANG Wei;GAO Hanchao;LI Zhonghui(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2023年第6期510-513,共4页Research & Progress of SSE

摘　　要：采用固态源分子束外延系统(SSMBE),研究InP双异质结双极晶体管(DHBT)的结构设计及外延生长技术。通过采用碳掺杂浓度和InGaAs组分双缓变的基区生长工艺,提高基区的内建电场,加速载流子的渡越,提高基于0.25μm发射极工艺InP DHBT器件的频率性能。此外,InGaAs帽层材料通过双Si源掺杂以及调控生长条件,实现高N型掺杂,材料表面粗糙度为0.42 nm。利用该双缓变基区以及高N型掺杂帽层生长工艺,制备0.25μm发射极InP DHBT器件,其增益为29,击穿电压为3.8 V,在工作电流密度为5.7 mA/μm2时,电流增益截止频率为403 GHz,最大振荡频率达到660 GHz。The structural design and epitaxial growth technology of InP double heterojunction bipolar transistor(DHBT)were studied using solid-state source molecular beam epitaxy system(SSMBE).By adopting base region growth process with dual gradient in C-doping concentration and InGaAs components,the built-in electric field in the base region is increased,accelerating the transition of charge carriers,and improving the frequency performance based on 0.25μm emitter InP DHBT.In addition,the InGaAs cap layer achieves high N-type doping by dual Si sources and regulating growth conditions,with a surface roughness of 0.42 nm.Using the dual gradient base region and high N-type doping cap layer growth process,the 0.25μm emitter InP DHBT device reaches current gain of 29,breakdown voltage of 3.8 V,current gain cut-off frequency of 403 GHz and maximum oscillation frequency of 660 GHz at operating current density of 5.7 mA/μm2.

关 键 词：分子束外延 双异质结晶体管 铟镓砷 截止频率 

分 类 号：TN304.2[电子电信—物理电子学]