1 A/mm高电流密度金刚石微波功率器件  

1 A/mm High Current Density Diamond Microwave Power Devices

作　　者：谯兵 郁鑫鑫[1] 李忠辉[1,2] 陶然[1] 周建军[2] 陈堂胜[2] QIAO Bing;YU Xinxin;LI Zhonghui;TAO Ran;ZHOU Jianjun;CHEN Tangshen(CETC Key Laboratory of Carbon-based Electronics,Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,中国电科碳基电子重点实验室,南京210016 [2]南京电子器件研究所,固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2024年第1期1-5,共5页Research & Progress of SSE

摘　　要：基于自对准栅电极制备技术,研制了具有低导通电阻和高电流密度的氢终端金刚石微波功率器件。采用高功函数金属Au与氢终端金刚石实现了良好的欧姆接触,接触电阻为0.73Ω·mm。得益于较低的源漏串联电阻和低损伤Al2O3栅介质原子层沉积工艺,金刚石微波器件的导通电阻低至4Ω·mm,饱和电流密度达1.01 A/mm,最大跨导为213 mS/mm,最大振荡频率达58 GHz。研究了该器件在2 GHz和10 GHz频率下连续波功率输出特性,发现在15 V低工作电压下即可分别实现1.56 W/mm和1.12 W/mm的输出功率密度,展现出自对准技术在研制高电流和高输出功率金刚石微波器件上的潜力。Hydrogen-terminated diamond microwave power devices with low on-resistance and high current density had been fabricated by using a self-aligned gate technique.A low ohmic contact resistance of 0.73Ω·mm is achieved for the hydrogen terminated diamond by employing a high workfunction contact metal Au.Attributing to the low source and drain series resistances and low damage deposition process of Al2O3 gate dielectric by atomic layer deposition(ALD),the diamond microwave device realizes a low on-resistance of 4Ω·mm,a high current density of 1.01 A/mm,a high transconductance of 213 mS/mm,as well as a high maximum oscillation frequency of 58 GHz.The power output characteristics at frequency of 2 GHz and 10 GHz in continuous wave mode have been researched and it is found that the high output power density of 1.56 W/mm and 1.12 W/mm are obtained,respectively,showing the potential of the self-alignment technique for fabricating high-current and highpower diamond microwave devices.

关 键 词：金刚石 自对准技术 高电流密度 微波功率 

分 类 号：TN385[电子电信—物理电子学] TN386.1