基于BCD工艺的LIN总线收发器设计  

LIN Bus Transceiver Design Based on BCD

作　　者：杨雨辰 王志亮[1] 孙力 谭庶欣 YANG Yuchen;WANG Zhiliang;SUN Li;TAN Shuxin(School of Information Science and Technology,Nantong University,Nantong,Jiangsu,226019,CHN)

机构地区：[1]南通大学信息科学技术学院,江苏南通226019

出　　处：《固体电子学研究与进展》2024年第1期50-58,共9页Research & Progress of SSE

基　　金：江苏省科技成果转化专项资金资助项目(BA2022001);江苏省高等学校自然科学研究重大项目(22KJA510005)。

摘　　要：针对汽车内部复杂的控制节点与严苛的通讯环境,设计了一款抑制电磁干扰的局域互联网络(Local interconnect network, LIN)总线收发器芯片。基于90 nm BCD高压工艺,采用双向静电放电保护、分段电流驱动、共源级隔离驱动以及总线反馈技术提高系统可靠性。测试结果表明芯片性能符合LIN总线物理层协议规范要求,实现了高低电压域的转换;同时具有良好的抗干扰能力,信号占空比最大变化仅为2.8%,电磁辐射比标准限制值低28 dBμV,达到车用LIN总线通讯相关标准要求。Aiming at the complex control nodes and harsh communication environment,a local in-terconnect network bus transceiver chip is designed to suppress electromagnetic interference.Based on 90 nm BCD high voltage technology,bidirectional electronic static discharge protection,step current drive,common source level isolation drive and bus feedback technology are adopted to improve sys-tem reliability.The test results show that the performance of the chip conforms to the physical layer protocol specification of LIN bus and realizes the conversion of high-low voltage domain.At the same time,it has great anti-interference ability,and the maximum change in signal duty cycle is only 2.8%.The electromagnetic radiation is 28 dBμV lower than the standard limit value,which meets the requirements of automobile LIN bus communication standards.

关 键 词：LIN总线 收发器 斜率控制 BCD工艺 电磁干扰 ESD保护 

分 类 号：TN433[电子电信—微电子学与固体电子学]