大功率808 nm分布反馈激光器阵列研制  

Study of High-power 808 nm Distributed Feedback Laser Array

作　　者：孙春明 朱振 任夫洋 陈康 苏建 夏伟 徐现刚[1,3] SUN Chunming;ZHU Zhen;REN Fuyang;CHEN Kang;SU Jian;XIA Wei;XU Xiangang(Institute of Novel Semiconductors of Shandong University,Jinan,250100,CHN;School of Physics and Technology,Jinan,250022,CHN;Shandong Huaguang Optoelectronics Co.,Ltd.,Jinan,250000,CHN)

机构地区：[1]山东大学新一代半导体材料研究院,济南250100 [2]济南大学物理科学与技术学院,济南250022 [3]山东华光光电子股份有限公司,济南250000

出　　处：《固体电子学研究与进展》2024年第1期72-76,共5页Research & Progress of SSE

摘　　要：为了提高808 nm大功率半导体激光器阵列的波长稳定性,提出了带有二阶布拉格光栅的大功率宽条型808 nm分布反馈激光器阵列。相比于传统的一阶布拉格光栅,其可以显著抑制简并纵模的产生,提高器件的波长锁定范围。借助于金属有机化学气相沉积、全息光刻、干法刻蚀以及湿法腐蚀等工艺,完成了器件的制备,并且在准连续条件(200 A、200μs、20 Hz)下,对所制备的激光器阵列进行了不同温度下的性能测试。测试结果表明:器件峰值输出功率可达到190 W,光电转换效率超过55%,光谱半高宽为0.6 nm,温漂系数为0.06 nm/K,波长锁定范围达到125℃(-35~90℃)。另外,对其进行了老化考评,结果显示,老化2 000 h后峰值功率衰减小于4%。In order to improve the wavelength stability of 808 nm high-power semiconductor laser array,a high-power wide-strip 808 nm distributed feedback laser array with second-order Bragg grat-ing was proposed.Compared with the traditional first-order Bragg grating,it could significantly sup-press the generation of degenerate longitudinal mode and improve the wavelength locking range of the device.The device was prepared by means of metal-organic chemical vapor deposition,holographic li-thography,dry etching and wet etching,and the performance of the prepared laser array was tested un-der quasi-continuous conditions(200 A,200μs,20 Hz)at different temperatures.The test results show that the peak output power of the device can reach 190 W.The photoelectric conversion efficien-cy is more than 55%.The spectral half-height width is 0.6 nm.The temperature drift coefficient is 0.06 nm/K and the wavelength locking range is 125℃(-35-90℃).In addition,the aging evaluation results show that the peak power attenuation is less than 4%after 2000 hours of aging.

关 键 词：温漂系数 二次外延 全息光刻 二阶光栅 激光器阵列 

分 类 号：TN248.4[电子电信—物理电子学]