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作 者:迟锋 CHI Feng(School of Electronic and Information Engineering,UEST of China,Zhongshan Institute,Zhongshan 528400,China)
机构地区:[1]电子科技大学中山学院电子信息学院,广东中山528400
出 处:《渤海大学学报(自然科学版)》2023年第4期343-348,共6页Journal of Bohai University:Natural Science Edition
基 金:国家自然科学基金项目(No:12264037)。
摘 要:由于体积小而使得施加在系统上的微小温度差产生显著的热压,以量子点为代表的微米/纳米量级导体是研究非线性热电效应(包括赛贝克和帕尔贴效应)及热动力学的理想平台.综述同时存在温度差和偏置电压情况下半导体量子点系统中的非线性热电效应的研究进展,基于散射方法讨论线性和非线性范围内热电效应的区别.中心研究内容是非线性的热电效率计算,同时考虑超导体和拓扑绝缘体中交叉热电效应和非线性自旋过滤效应.最后,对半导体量子点系统中非线性热电效应提出展望和未来可能的研究方向.The small-sized nano-and micro-scale semiconductors represented by quantum dots are ideal platforms to study the nonlinear thermoelectric effect(including the Seebeck and Peltier effects),due to the remarkable thermal bias induced by temperature gradient applied across the system.The present paper overviews the progresses of the nonlinear thermoelectric effects in systems composed of semiconductor quantum dots under both temperature difference and bias voltage,and discusses the differences between linear and nonlinear response regimes based on the scattering theory.The present paper focuses on the calculation of nonlinear thermoelectric efficiency,and consider simultaneously considers the cross thermoelectric effect in superconductors and topological insulators.Finally,we summarize the paper and give some outlooks about the possible future research directions for the nonlinear thermoelectric effect.
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