极性、半极性和非极性InN薄膜的MOCVD外延生长与表征  

MOCVD Epitaxial Growth and Characterization of Polar,Semipolar and Nonpolar InN Thin Films

作　　者：赵见国 殷瑞 徐儒 倪海彬 陶涛[2] 庄喆[2] 严羽 谢自力[2] 刘斌[2] 常建华[1] ZHAO Jianguo;YIN Rui;XU Ru;NI Haibin;TAO Tao;ZHUANG Zhe;YAN Yu;XIE Zili;LIU Bin;CHANG Jianhua(School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China)

机构地区：[1]南京信息工程大学电子与信息工程学院,江苏南京210044 [2]南京大学电子科学与工程学院,江苏南京210093

出　　处：《发光学报》2024年第2期204-210,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(62204121)。

摘　　要：利用金属有机化合物化学气相沉积(MOCVD)技术,在不同晶面的蓝宝石(Al2O3)衬底上实现了极性(0002)面、半极性(11-22)面和非极性(11-20)面InN薄膜的外延生长,并通过多种表征手段对三个不同极性面InN薄膜的结构和光学特性进行了系统研究。X射线衍射(XRD)曲线展示了(0002)、(11-22)和(11-20)面InN较强的衍射峰,表明InN薄膜具有较高的成膜质量。通过扫描电子显微镜(SEM)表面图发现,极性(0002)面InN的表面形貌较光滑,而半极性和非极性InN表面均存在未完全合并的孔洞。光致发光(PL)光谱展示,不同极性面InN的峰值能量在0.63 eV附近,并从极性、半极性到非极性逐渐红移。此外,可见-红外分光光度计测得的透射谱显示,极性(0002)面InN的吸收边约为0.85 eV,而半极性(11-22)面和非极性(11-20)面InN的吸收边约为0.78 eV,表明极性InN具有更大的斯托克斯位移。In this paper,polar(0002),semipolar(11-22)and nonpolar(11-20)planes of InN thin films were grown on different planes of sapphire(Al2O3)substrates by using metal-organic chemical vapor deposition(MOCVD)technology,and the structural and optical properties of these InN thin films were intensively investigated by various characterization means.The X-ray diffraction(XRD)curves show the stronger diffraction peaks of the(0002),(11-22)and(11-20)planes of InN,indicating the relatively high crystalline quality of the InN films.The scanning elec‐tron microscopy(SEM)surface images reveale that the surface morphology of polar(0002)-plane InN was smoother,while incompletely merged holes were presented on both semipolar and nonpolar InN surfaces.Photoluminescence(PL)spectra demonstrate that the peak energies of different planes of InN were around 0.63 eV and gradually red-shift‐ed from polar,semipolar to nonpolar.In addition,the transmission spectra measured with a visible-infrared spectro‐photometer show that the absorption edge of polar(0002)-plane InN is around 0.85 eV,while the absorption edge of semipolar(11-22)and nonpolar(11-20)-planesInN isaround 0.78 eV,suggestingalargerStokes’shiftforpolarInN.

关 键 词：半极性面 非极性面 INN薄膜 外延生长 

分 类 号：O482.31[理学—固体物理]