栅场板对AlGaN/GaN HEMT击穿特性的调控  

Regulation of Gate-field Plate on Breakdown Characteristics of AIGaN/GaNHEMT

作　　者：王进军[1] 徐晨昱 杨嘉伦 刘宇[1] 冯岩 张世奇 WANG Jinjun;XU Chenyu;YANG Jialun;LIU Yu;FENG Yan;ZHANG Shiqi(School of Electronic Information and Artificial Intelligence,Shaanxi University of Science&Technology,Xi'an 710021,China)

机构地区：[1]陕西科技大学电子信息与人工智能学院,陕西西安710021

出　　处：《山西大学学报（自然科学版）》2024年第1期187-193,共7页Journal of Shanxi University(Natural Science Edition)

基　　金：陕西省教育厅科研计划专项项目(18JK0103)。

摘　　要：栅场板对提升AlGaN/GaN高电子迁移率晶体管(HEMT)击穿电压的物理机理以及相关理论问题缺乏深入的研究。本文通过在传统的AlGaN/GaN HEMT结构中引入栅场板来调控器件内部的电场分布以提高器件的击穿电压,并基于Silvaco TCAD软件对器件进行了建模。通过模拟计算研究了栅场板长度、厚度以及绝缘介质材料对器件沟道电场分布及击穿电压调制作用。结果表明:沟道电场峰值随栅场板长度增加而降低,但是当栅场板长度增加到某一数值继续增长的时候,反而会引起沟道电场峰值降低;栅场板厚度对沟道电场的分布几乎没有影响;栅场板下绝缘介质介电系数越大,沟道峰值电场强度越小;栅场板长度为2.00μm时,器件击穿电压高达800 V。The physical mechanism and related theoretical issues of improving the breakdown voltage of AIGaN/GaN High Electron Mobility Transistor(HEMT)by gate field plate are not studied deeply.In this paper,a gate-field plate is introduced into the traditional AIGaN/GaN HEMT structure to regulate the electric field distribution within the device and increase the breakdown voltage of the device.The device is modeled based on Silvaco TCAD software.The effects of gate field plate length,thickness and insulating material on the channel electric field distribution and breakdown voltage modulation of the device are studied by simulation calculation.The results show that the peak value of the channel electric field decreases with the increase of the length of the gate field plate,but when the length of the gate field plate increases to a certain value,the peak value of the channel electric field decreases;The thickness of grid field plate has little effect on the distribution of channel electric field;The higher the dielectric coefficient of the insulating medium under the grid field plate,the smaller the peak electric field intensity of the channel;the device breakdown voltage is more than 800 V when the length of the gate field plate is 2.0μm.

关 键 词：ALGAN/GAN高电子迁移率晶体管 击穿特性 峰值电场 栅场板 

分 类 号：TN386[电子电信—物理电子学]