镶嵌靶磁控溅射Cu-W薄膜的结构与力学性能  

Structures and Mechanical Properties of Cu-W Thin Films Deposited by Mosaic Target Magnetron Sputtering

作　　者：郭中正 闫万珺 张殿喜 杨秀凡 蒋宪邦 周丹彤 GUO Zhongzheng;YAN Wanjun;ZHANG Dianxi;YANG Xiufan;JIANG Xianbang;ZHOU Dantong(School of Electronics and Information Engineering,Anshun University,Anshun 561000,China)

机构地区：[1]安顺学院电子与信息工程学院,贵州安顺561000

出　　处：《材料保护》2024年第3期166-174,共9页Materials Protection

基　　金：贵州省教育厅青年科技人才成长项目(非混溶体系铜-钨薄膜结构均质化机理及力学行为研究,黔教合KY字[2019]145号);贵州省教育厅青年科技人才成长项目(相场法模拟单晶硅、多晶硅晶体生长机理与应用,黔教合KY字[2020]134号);贵州省科技计划项目(飞机起落架用高性能TC18合金防扭臂模锻成型关键技术研发,黔科合支撑[2023]一般278)资助。

摘　　要：为研究W含量对Cu-W薄膜的结构与力学性能的影响,用磁控溅射工艺制备Cu-W薄膜,靶材为镶嵌组合型。薄膜的成份、结构、表面形貌分别选用能谱仪(EDS)、X射线衍射仪(XRD)和高分辨透射电镜(HRTEM)、扫描电镜(SEM)及原子力显微镜(AFM)进行表征。薄膜屈服强度σ_(0.2)和裂纹萌生临界应变ε_(c)、弹性模量E及显微硬度H分别用微小力测试系统和纳米压痕仪进行测试。结果表明,调整W靶的面积占比即可控制薄膜成分,当W靶的面积占比从5%增至25%时,Cu-W薄膜的W含量(原子分数)从2.30%逐渐提高到15.10%,且薄膜中存在fcc Cu(W)亚稳准固溶体。随W含量的增加,Cu-W薄膜的平均晶粒尺寸从28 nm逐渐减小至18 nm,准固溶度从1.30%(原子分数)W逐渐增至9.50%W,薄膜的表面光洁度提高。随W含量的增加,Cu-W薄膜的屈服强度σ_(0.2)和显微硬度H提高较为明显,弹性模量E稍有增加,而裂纹萌生临界应变ε_(c)则减小。Cu-15.10%W薄膜具有最小的平均晶粒尺寸和最高的表面光洁度,其屈服强度、硬度及弹性模量值最高(σ_(0.2)=0.86 GPa、H=6.1 GPa、E=123.5 GPa),裂纹萌生临界应变ε_(c)值为0.84%,综合力学性能最好。In order to study the effects of W content on the structure and mechanical properties of Cu-W thin films,these films were prepared by magnetron sputtering process using mosaic combination targets.The composition,structure and surface morphology of the thin films were characterized,respectively,by energy dispersive spectroscopy(EDS),X-ray diffraction(XRD),high-resolution transmission electron micro-scope(HRTEM),scanning electron microscope(SEM)and atomic force microscope(AFM).The yield strength(σ_(0.2)),critical strain for crack initiation(ε_(c)),elastic modulus(E)and microhardness(H)of the thin films were tested using micro-force testing system and nano in-dentation instrument,respectively.Results showed that the composition of the thin films could be controlled by adjusting the proportion of the W target area.When the proportion of the W target area was increased from 5%to 25%,the W content in the Cu-W thin films was observed to gradually increase from 2.30%(atomic fraction,the same below)to 15.10%,accompanied by the formation of an fcc Cu(W)metastable quasi-solid solution.As the W content increased,the average grain size of the Cu-W thin films was seen to gradually decrease from 28 nm to 18 nm,the quasi-solid solubility was noted to gradually increase from 1.30%W to 9.50%W,and an improvement in the surface smoothness of the thin films was recorded.With the increase of W content,it was found that the yield strength(σ_(0.2))and microhardness(H)of the Cu-W thin films increased significantly,the elastic modulus exhibited a slight increase,while the critical strain for crack initiation(ε_(c))experienced a decrease.The Cu-15.10%W thin film was determined to possess the smallest average grain size and the highest surface smoothness,along with the highest yield strength,hardness and elastic modulus(σ_(0.2)=0.86 GPa,H=6.1 GPa,E=123.5 GPa);the critical strain for crack initiation(ε_(c))value was 0.84%,indicating the best comprehensive mechanical performance.

关 键 词：磁控溅射 Cu-W薄膜 结构 力学性能 

分 类 号：TG146.1[一般工业技术—材料科学与工程] TG146.4[金属学及工艺—金属材料]