双芯IGCT浪涌电流鲁棒性研究  

Study on Surge Current Robustness of Dual IGCT

作　　者：鲁一苇 姚德贵 董曼玲 肖超 陈涛 杨武华[2] Lu Yiwei;Yao Degui;Dong Manling;Xiao Chao;Chen Tao;Yang Wuhua(State Grid Henan Electric Power Research Institute,Zhengzhou 450052,China;School of Automation and Information Engineering,Xi'an University of Technology,Xi'an 710048,China)

机构地区：[1]国网河南省电力公司电力科学研究院,郑州450052 [2]西安理工大学自动化与信息工程学院,西安710048

出　　处：《半导体技术》2024年第3期234-239,245,共7页Semiconductor Technology

摘　　要：作为晶闸管类器件,双芯集成门极换流晶闸管(Dual IGCT)必须具备的抗浪涌电流能力研究鲜见报道。基于多单元集成的器件仿真结构模型,揭示了Dual IGCT在浪涌电流下工作时,总电流在GCT-A部分和GCT-B部分间的分配比例会随晶格温度升高而减小。在此基础上,分析了寿命控制技术对Dual IGCT浪涌鲁棒性的影响。结果表明,增大GCT-B的载流子寿命可以提高器件的浪涌鲁棒性,但同时会增大器件的功耗;而在对GCT-B进行载流子寿命控制时,引入具有较大寿命对温度依赖系数的复合中心,可以有效提高Dual IGCT浪涌电流鲁棒性,同时不影响器件的其他性能。最后,提出了一种工艺成本较低的阳极短路Dual IGCT新结构,其在浪涌电流下的晶格温升与传统的Dual IGCT相比大幅减小(约150 K),呈现出极高的抗浪涌能力。The research of the surge current capability that the dual integrated gate commutated thyristor(Dual IGCT)as a thyristor-type device must possess is rarely reported.Based on the simulation structural model of an integrated multi-cell device,it reveals that the distribution ratio of total current between GCT-A and GCT-B sections of Dual IGCT decreases with the increase of lattice temperature when it operates under surge current.On this basis,the impact of lifetime control technology on the surge robustness of Dual IGCT was analyzed.The results indicate that increasing the carrier lifetime of GCT-B can improve the surge robustness of the device,but it will also increase the power losses of the device;when controlling the carrier lifetime of GCT-B,the introduction of a recombination center with a larger coefficient for temperature dependence of lifetime can effectively improve the surge robustness of Dual IGCT without affecting other performances of the device.Finally,a new structure of short-anode Dual ICCT with lower process cost was proposed.Compared with traditional Dual IGCT,the lattice temperature rise of the proposed Dual IGCT under surge current was greatly reduced by about 150 K,demonstrating extremely high surge capability.

关 键 词：双芯集成门极换流晶闸管(Dual IGCT) 浪涌电流 寿命控制 复合中心 鲁棒性 

分 类 号：TN34[电子电信—物理电子学]