基于GaAs pHEMT工艺的0.1 GHz~8.0 GHz低噪声放大器  

Low noise amplifier of 0.1 GHz~8.0 GHz based on GaAs pHEMT process

作　　者：叶乔霞 陈奇超 张超 高海军[1] YE Qiaoxia;CHEN Qichao;ZHANG Chao;GAO Haijun(KeyLaboratory for RF Circuits and Systems,Ministry of Education.HangzhouDianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2023年第5期30-35,74,共7页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：国家自然科学基金资助项目(61871161)。

摘　　要：基于0.25μm GaAs pHEMT工艺,设计了一款工作频率为0.1 GHz~8.0 GHz的超宽带低噪声放大器,采用单级共源共栅(cascode)结构,使用电阻并联负反馈扩展了低噪声放大器的带宽,并且采用电感中和技术补偿了高频增益与提高频率响应。仿真结果表明:该款低噪声放大器的分数带宽高达195%,噪声系数小于1.32 dB,最高增益为21.2 dB,1 dB压缩点为16 dBm。在砷镓化合物工艺设计的低噪放中,本文拥有195%的分数带宽,较高的增益和较低的噪声系数。Based on the 0.25μm GaAs pHEMT process,an ultra wideband low-noise amplifier with operating frequency of 0.1 GHz~8.0 GHz was designed,which adopts the single-stage cascode structure.The bandwidth of the low-noise amplifier was expanded by using the resistance parallel negative feedback.And the inductance neutralization technology was used to compensate the high frequency gain and improve the frequency response.The simulation results show that the fractional bandwidth is 195%,the noise figure is less than 1.32 dB,the maximum gain is 21.2 dB,and the 1 dB compress ion point is 16 dBm.In the low noise amplifier designed by GaAs compound process,the new method achieves 195%fractional bandwidth,higher gain and lower noise figure.

关 键 词：砷化镓 低噪声放大器 共源共栅 宽带 

分 类 号：TN432[电子电信—微电子学与固体电子学]