钛酸钡基阻变存储单元的构建及其特性  

Construction and characteristics of barium titanate based resistive random-acess memory

作　　者：郝瑞 刘越 刘贵山 HAO Rui;LIU Yue;LIU Guishan(School of Textile and Material Engineering,Dalian Polytechnic University,Dalian 116034,China;Key Laboratory of New Materials and Material Modification,Dalian Polytechnic University,Dalian 116034,China)

机构地区：[1]大连工业大学纺织与材料工程学院,辽宁大连116034 [2]大连工业大学辽宁省高校新材料与材料改性重点实验室,辽宁大连116034

出　　处：《大连工业大学学报》2024年第1期51-55,共5页Journal of Dalian Polytechnic University

基　　金：辽宁省高等学校产业技术研究院项目(2018LY017)。

摘　　要：采用磁控溅射在低阻态Si(100)衬底上制备均匀的钛酸钡(BTO)薄膜,通过磁控溅射制备Ag电极,构建Si(100)/BTO/Ag阻变存储单元。利用XRD,SEM和AFM对不同退火温度和保温时间下的BTO薄膜结构和形貌进行表征,利用数字源表对Si(100)/BTO/Ag阻变存储单元进行阻变性能测试。结果表明,退火温度750℃、保温0.5 h条件下制备的BTO薄膜结晶度最高,薄膜表面晶体颗粒呈均匀分布,构建的Si(100)/BTO/Ag阻变存储单元阻变性能最佳,呈现典型的双极性开关效应。Barium titanate(BTO)thin films were prepared by magnetron sputtering on low-resistance Si(100)substrates.Ag electrodes were prepared by magnetron sputtering,and Si(100)/BTO/Ag resistive random-acess memory was successfully constructed.The structure and morphology of BTO films at different annealing temperatures and holding times were characterized by XRD,SEM and AFM.The resistive switching properties of Si(100)/BTO/Ag resistive random-acess memory were tested by digital source table.The results showed that the BTO film prepared by annealing at 750℃for 0.5 h has the highest crystallinity,and the crystal particles on the surface of the film are evenly distributed.The constructed Si(100)/BTO/Ag resistive random-acess memory has the best resistive switching performance,showing a typical bipolar switching effect.

关 键 词：磁控溅射 BTO薄膜 阻变存储单元 阻变性能 

分 类 号：TB321[一般工业技术—材料科学与工程]