基于GaAs工艺的Ku波段功率放大器设计  

Ku-band power amplifier design based on GaAs process

作　　者：李圣麒 韩磊[1] 苏国东[1] 王翔[1] 刘军[1] LI Shengqi;HANG Lei;SU Guo-dong;WANG Xiang;LIU jun(Key Laboratory for RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学,浙江省大规模集成电路设计重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2023年第6期13-19,共7页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：本文研制一款12 GHz~18 GHz的Ku波段三级功放(功率放大器,Power Amplifier)。该电路采用三级级联拓扑结构,利用双L型结构有耗匹配网络设计每一级晶体管的输入/级间匹配,通过输出匹配将端口阻抗与最佳负载阻抗进行匹配,实现12 GHz~18 GHz范围内的宽带阻抗匹配。进一步地,将直流供电端采用的扼流电感参与阻抗匹配,进而避免使用面积较大的扼流电感,在增加匹配网络自由度改善功放带宽的同时有效地减小了功放的面积。该功放基于0.5μm GaAs pHEMT工艺设计、加工与制造,包含了焊盘的芯片面积为1.91 mm×0.76 mm。测量结果表明,在12 GHz~18 GHz的工作频率范围内,该功放的小信号增益为15.7 dB、输入输出驻波比均小于1.71、带内平坦度为±1.2 dB、输出饱和功率为23 dBm、功率附加效率为大于20%。This paper proposes a 12 GHz~18 GHz Ku-band three-stage cascaded amplifier(power amplifier).The circuit adopts a three-stage cascade topology,uses a double L-shaped structure with a dissipative matching network to design the input/inter-stage matching of each transistor stage,and matches the port impedance with the optimum load impedance through output matching,achieving broadband impedance matching in the 12 GHz~18 GHz range.Further,the choke inductor used at the DC supply is involved in the impedance matching,thus avoiding the use of large area choke inductors and effectively reducing the area of the amplifier while increasing the freedom of the matching network to improve the bandwidth of the amplifier.The amplifier is designed,processed and fabricated based on 0.5μm GaAs pHEMT process and the chip area including all pad is 1.91 mm×0.76 mm.The measurement results show that in the operating frequency range of 12 GHz~18 GHz,the amplifier has a small signal gain of 15.7 dB,an input-to-output VSWR less than 1.71,an in-band flatness of±1.2 dB,an output saturation power is 23 dBm,and the power additive efficiency is greater than 20%.

关 键 词：GaAs 功率放大器 KU波段 驻波比 带内平坦度 饱和功率 功率附加效率 

分 类 号：TN402[电子电信—微电子学与固体电子学]