Ta_(2)NiSe_(5)/GaN范德华异质结用于具有超高响应性和耐恶劣环境的紫外光电探测器  

Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta_(2)NiSe_(5)/GaN van der Waals heterojunction

作　　者：雷剑鹏 郑涛 吴望龙 郑照强 郑筌升 王小周 肖文波 李京波 杨孟孟 Jianpeng Lei;Tao Zheng;Wanglong Wu;Zhaoqiang Zheng;Quansheng Zheng;Xiaozhou Wang;Wenbo Xiao;Jingbo Li;Mengmeng Yang(Jiangxi Engineering Laboratory for Optoelectronics Testing Technology,Nanchang Hangkong University,Nanchang 330063,China;Guangdong Provincial Key Laboratory of Chip and Integration Technology,School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China;School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China;Department of Applied Physics,School of Physics and Electronics,Hunan University,Changsha 410082,China;College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]Jiangxi Engineering Laboratory for Optoelectronics Testing Technology,Nanchang Hangkong University,Nanchang 330063,China [2]Guangdong Provincial Key Laboratory of Chip and Integration Technology,School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China [3]School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China [4]Department of Applied Physics,School of Physics and Electronics,Hunan University,Changsha 410082,China [5]College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,China

出　　处：《Science China Materials》2024年第3期863-870,共8页中国科学（材料科学）（英文版）

基　　金：supported by the National Natural Science Foundation of China (62175040, 61805044, 12064027, and 62065014);the Science and Technology Program of Guangzhou(202201010242);Guangdong Basic and Applied Basic Research Foundation(2022A1515110981);2022 Jiangxi Province High-level and High-skilled Leading Talent Training Project Selected (No. 63);Jiangxi Provincial Department of Education Science and Technology Key Project (GJJ2204302);Jiujiang Municipal Science and Technology Program (Natural Science Foundation, Innovative Talents)(2022-2023)。

摘　　要：氮化镓由于其直接带隙、固有的紫外吸收和高击穿电压引起了人们对其在紫外光电探测领域的极大研究兴趣.在本工作中,我们成功地将新型三元硫族化合物Ta_(2)NiSe_(5)与非故意掺杂的GaN堆叠,形成了具有典型I型能带排列的混合维度的Ta_(2)NiSe_(5)/GaN(2D/3D)范德瓦尔斯异质结构.该异质结构表现出优异的紫外探测性能(光开关比为10~7,响应度为1.22×10^(4)A W^(-1)).此外,在365 nm的光照和4 V的偏压下,探测度提高至1.3×10^(16)Jones,并表现出1.22/31.6 ms的快速响应速率.值得注意的是,该器件还具有优异的稳定性、可重复性和抗恶劣环境条件(包括高温和酸性条件)的耐受性.得益于光电探测器的高响应度、探测度和光开关比,我们成功地将该异质结构器件集成到紫外光通信中,证明了Ta_(2)NiSe_(5)/GaN光电探测器在信息传输中有着优异的应用前景.Gallium nitride(GaN) has garnered significant research interest for ultraviolet(UV) photodetectors due to its direct bandgap, inherent UV absorption window, and high breakdown voltage. In this work, a new ternary chalcogenides Ta_(2)NiSe_(5) with high mobility is successfully stacked with unintentionally-doped GaN to creat an integrated mixed-dimensional Ta_(2)NiSe_(5) /GaN(2D/3D)vanderWaals heterojunction with a typical type-I band alignment. The resulting Ta_(2)NiSe_(5) /GaN heterojunction exhibits excellent UV detection performance, with a pronounced light on/off ratio of 10~7 and a large responsivity of 1.22 × 10^(4)A W^(-1). Moreover, it demonstrates an enhanced detectivity up to 1.3 × 10^(16)Jones under 365-nm light illumination at a bias of 4 V. The photodetector also exhibits a fast response speed of 1.22/3.16 ms.Remarkably, the device showcases exceptional stability, repeatability, and tolerance to harsh environmental conditions,including high temperature and acidic condition. Furthermore, leveraging the high responsivity, detectivity, and light on/off ratio of the photodetector, we successfully integrate this heterojunction device into UV optical communication, highlighting its potential in information transmission.

关 键 词：GAN Ta_(2)NiSe_(5) HETEROJUNCTION UV photodetector super-high responsivity harsh environment-resistant 

分 类 号：TN23[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]