高功率纳秒级激光二极管高侧驱动电路  

High-side drive circuit for high power nanosecond laser diode

作　　者：金明泽 王臣 朱福 杨信诚 李智冰 赵晓琛 何伟基[1] 张闻文[1] JIN Ming-ze;WANG Chen;ZHU Fu;YANG Xing-cheng;LI Zhi-bing;ZHAO Xiao-chen;HE Wei-ji;ZHANG Wen-wen(School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China)

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《激光与红外》2024年第2期171-178,共8页Laser & Infrared

摘　　要：纳秒级高功率的激光发射系统对激光雷达的探测性能产生重要影响。本文对普遍使用的激光二极管低侧栅极驱动电路进行修改得到高侧栅极驱动方式,使之能够适用于共阴极激光发射电路。该高侧驱动方式采用了一个半桥驱动器,两个GaN FET作为核心器件来控制激光二极管的发光。文中分析了该拓扑结构中电压、电容、电阻、电感等因素对流经激光器电流波形的影响。经过实验测试,在高重复频率下该电路能够产生3.1 ns脉冲宽度,约65 W的峰值功率,能够作为激光雷达的发射模块对场景进行扫描成像。The nanosecond high-power laser emission system has an important impact on the detection performance of LIDAR.In this paper,the commonly used low-side gate drive is modified to obtain a high-side gate drive method,making it suitable for common cathode laser emission circuits.And the high-side drive method utilizes a half-bridge driver with two GaNFETs as core devices to control the light emission of the laser diode.The effects of voltage,capacitance,resistance,and inductance on the current waveform flowing through the laser are analyzed in this topology.After experimental testing,the circuit is capable of generating a pulse width of 3.1 ns and a peak power of approximately 65 W at high repetition rates,which can be used as a transmitter module for LIDAR to scan and image scenes.

关 键 词：纳秒级 高功率 激光发射 高侧栅极驱动 共阴极 高重复率 

分 类 号：TN952[电子电信—信号与信息处理] TN248.4[电子电信—信息与通信工程]