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作 者:崔洪波[1] 方健 宋洋 孟祥毅 吴峰 CUI Hongbo;FANG Jian;SONG Yang;MENG Xiangyi;WU Feng(Nanjing Electronic Devices Institute,Nanjing 210016,China)
出 处:《电子工艺技术》2024年第2期14-18,共5页Electronics Process Technology
基 金:技术基础科研项目(JSBZ2022210A001)。
摘 要:通过模拟前道工序的实际装配环境,研究了镀镍钯金基板在不同工况条件和不同钯/金层厚度情况下对表面键合强度的影响。结果表明,通过280℃高温回流后,镀层表面会出现少量Cu元素,但对键合强度影响不大。Au/Pd镀层厚度增加均有利于提高可键合性。在本文的镀层体系中,均可完成高可靠性键合。通过150±3℃,168 h的高温贮存试验表明,Pd和Au界面均可作为键合界面,高温贮存前后平均键合强度均在11 cN以上,满足标准且非常稳定。By simulating the actual assembly environment of the previous process,the effect of different working conditions and different thicknesses of Pd and Au layer on the surface bonding strength of NiPdAu substrates are investigated.The results show that a small amount of Cu element appeared on the surface of the coating layer after refluxing at high temperature of 280℃,but it has little effect on the bonding strength.The increase in the thickness of both Au and Pd coating is beneficial for improving the bonding strength.Highly reliable bonding can be achieved in the systems(Pd>0.10μm,Au>0.05μm).High temperature storage tests with a holding time of 168 h at 150℃show that both Pd and Au layers can be used as bonded interface.The average bonding strength before and after high-temperature storage is over 11 cccN,which meets the standard and is very stable.
分 类 号:TN405[电子电信—微电子学与固体电子学]
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