SiC单晶生长中的籽晶制备工艺  

Seed Crystal Preparation Technology in SiC Single Crystal Growth

作　　者：王毅 师开鹏 靳丽岩 武昕彤 王殿 WANG Yi;SHI Kaipeng;JIN Liyan;WU Xintong;WANG Dian(The 2nd Research Institute of CETC,Taiyuan 030024)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2024年第2期51-54,共4页Electronics Process Technology

摘　　要：作为碳化硅单晶生长的基础条件,籽晶制备质量直接决定了晶体是否能够正常生长。综合考虑现行籽晶石墨板粘接法和籽晶悬挂法籽晶固定技术,提出了粘接+悬挂的籽晶制备方法,研究了籽晶碳膜制备工艺和晶片/石墨纸粘接工艺,获得了一片高致密性碳化硅籽晶。经过碳化硅晶体生长验证,该籽晶能够满足高质量碳化硅晶体生长要求,晶体籽晶面光滑无析出物。As the basic condition for the growth of silicon carbide single crystals,the bonding quality of seed crystals directly determines whether the crystals can grow normally.Considering the current bonding method and suspension method of seed crystal fixation technology,the bonding+hanging seed crystal fixation method is proposed,and the preparation process of seed crystal carbon film and wafer/graphite paper bonding process are studied,and a piece of high-density silicon carbide seed crystal is obtained.After verification by the growth of silicon carbide crystal,the seed crystal can meet the growth requirements of high-quality silicon carbide crystal,and the crystal seed crystal surface is smooth and free of precipitates.

关 键 词：碳化硅 单晶 籽晶粘接 

分 类 号：TN304[电子电信—物理电子学]