γ辐照对InGaAsP/InP单光子雪崩探测器性能的影响  

Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes

作　　者：孙京华 王文娟[2] 诸毅诚 郭子路 祁雨菲 徐卫明[4] SUN Jing-Hua;WANG Wen-Juan;ZHU Yi-Cheng;GUO Zi-Lu;QI Yu-Fei;XU Wei-Ming(School of Materials and Chemistry,the University of Shanghai for Science and Technology,Shanghai 200093,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Space Active Opto-Electronics Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [3]中国科学院大学,北京100049 [4]中国科学院上海技术物理研究所空间主动光电技术重点实验室,上海200083 [5]中国科学院大学杭州高等研究院,浙江杭州310024

出　　处：《红外与毫米波学报》2024年第1期44-51,共8页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219);Shanghai Municipal Science and Technology Major Project(2019SHZDZX01,22JC1402902);the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200)。

摘　　要：对InGaAsP/InP单光子雪崩探测器(SPADs)进行了总剂量为10 krad(Si)和20 krad(Si)的γ辐照,并进行了原位和移位测试。辐照后,暗电流和暗计数率有轻微的下降,而探测效率和后脉冲概率基本不变。经过一定时间的室温退火后,这些退化基本恢复,这表明瞬态电离损伤在γ辐照对InGaAsP/InP单光子雪崩探测器的损伤中占主导地位。InGaAsP/InP single-photon avalanche diodes(SPADs)were gamma-irradiated with total doses of 10 krad(Si)and 20 krad(Si)and tested in situ and shift methods.After irradiation,the dark currents and dark count rates were degraded slightly,whereas the photon detection efficiency and the after pulse probability were basically unchanged.After a certain period of annealing at room temperature,these degradations were essentially recovered,indicating that transient ionization damage dominated in the gamma irradiation of InGaAsP/InP single-photon avalanche diodes.

关 键 词：Γ辐照 INGAASP/INP 单光子雪崩探测器 单光子性能 

分 类 号：TN312.7[电子电信—物理电子学]