带有阈值电压的非线性忆容器混合建模与特性分析  

Hybrid modeling and characteristic analysis of nonlinear memcapacitor with threshold voltage

作　　者：曹伟[1] 乔金杰[2] 崔弘 CAO Wei;QIAO Jinjie;CUI Hong(College of Computer and Control Engineering,Qiqihar University,Qiqihar 161006,Heilongjiang Province,China;College of Economics and Management,Qiqihar University,Qiqihar 161006,Heilongjiang Province,China)

机构地区：[1]齐齐哈尔大学计算机与控制工程学院,黑龙江齐齐哈尔161006 [2]齐齐哈尔大学经济与管理学院,黑龙江齐齐哈尔161006

出　　处：《电子元件与材料》2024年第2期204-208,共5页Electronic Components And Materials

基　　金：国家自然科学基金(71803095);黑龙江省自然科学基金(LH2020G009);黑龙江省省属本科高校基本科研业务费面上项目(145109141)。

摘　　要：忆容器是在电感、电容和电阻基本电路元件之后出现的新型电路元件,因其具有非易失性和非线性特点,在众多领域中具有广泛的应用前景。为了使忆容器模型更接近实际忆容器和方便与其他二端口电路元件连接,通过引入阈值电压的方法改进了忆容器荷控数学模型,并利用Simscape和Simulink相结合的混合建模方法建立了带有阈值电压的忆容器二端口仿真模型。通过仿真实验分析了触发电压的幅值和频率对该仿真模型磁滞回线的影响。结果表明,建立的仿真模型符合忆容器的基本特性,即磁滞回线随电压幅值的增大逐渐变宽,随电压频率的增加逐渐变窄。该模型可为以后忆容器的应用研究和仿真研究奠定基础。A memcapacitor is a new type of basic circuit element that appears after the basic circuit components of the traditional inductors,capacitors and resistors.Due to its non-volatile and non-linear characteristics,it has a wide range of applications in many fields.In order to make the memcapacitor model closer to the actual memcapacitor and to facilitate the connection with other two-port circuit elements,the charge control mathematical model of the memcapacitor was improved by introducing the threshold voltage,and a two-port simulation model of the memcapacitor with the threshold voltage was established by using hybrid modeling method of combining Simscape and Simulink.The influence of the amplitude and frequency of the trigger voltage on the hysteresis loop of the simulation model was analyzed through the simulation.The simulation results show that the simulation model matches the basic characteristics of the memcapacitor,that is,the hysteresis loop widens with the increase of the voltage amplitude and narrows with the increase of the voltage frequency.This model lays the foundation for the application and simulation research of the memcapacitor in the future.

关 键 词：忆容器 阈值电压 混合建模 仿真模型 Simscape 

分 类 号：TN702[电子电信—电路与系统]