基于高压SiC MOSFET模块桥式电路串扰抑制  

High Voltage SiC MOSFET Module-based Bridgee Circuit Crosstalk Suppression

作　　者：郑志豪 任小永[1] 黄帆[1] ZHENG Zhi-hao;REN Xiao-yong;HUANG Fan(Jiangsu Key Laboratory of New Energy Generation and Power Conversion,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China)

机构地区：[1]南京航空航天大学,江苏省新能源发电与电能变换重点实验室,江苏南京210016

出　　处：《电力电子技术》2024年第3期68-70,92,共4页Power Electronics

基　　金：国家自然科学基金(52177181)。

摘　　要：碳化硅(SiC)器件开关速度快,在高压条件下串扰现象明显,串扰尖峰容易引起桥臂直通,损坏器件。此处基于桥式电路,考虑了SiC寄生参数的影响,分析了桥臂串扰现象的原因。提出了一种有源箝位的电路,可以有效抑制桥臂串扰尖峰,并且可以减小驱动电阻,减小开关损耗。此处搭建了桥式电路实验平台,通过实验验证了该方案的有效性。在相同电阻条件下可以减小62%串扰尖峰。Silicon carbide(SiC)device exhibits high switching speed which prominently cause the occurrence of crosstalk under conditions of high voltage.Crosstalk peak can potentially lead to bridge arm transit and damage the decvice.The underlying causes of bridge arm crosstalk based on bridge circuit is systematically investigated which making a comprehensive analysis of SiC parasitic parameters.An innovative active clamping circuit is proposed to substantially suppress bridge arm crosstalk peak,minimizing driving resistance and reducing switching loss.A bridge circuit experimental platform is built and the effectiveness of the scheme is verified through experiments.Under the same resistance condition,the crosstalk peak can be reduced by 62%.

关 键 词：碳化硅器件 串扰抑制 桥式电路 

分 类 号：TN32[电子电信—物理电子学]