一种包含物理效应的SiC MOSFET行为模型  

A SiC MOSFET Behavior Model Including Physical Effects

作　　者：贠团庆 杨芳 刘伟景 李清华 YUN Tuan-qing;YANG Fang;LIU Wei-jing;LI Qing-hua(Shanghai University of Electric Power,Shanghai 200090,China;不详)

机构地区：[1]上海电力大学,电子与信息工程学院,上海200090 [2]深圳锐越微技术有限公司,广东深圳518172

出　　处：《电力电子技术》2024年第1期118-120,124,共4页Power Electronics

基　　金：国家自然科学基金(52177185,62174055)。

摘　　要：建立了一种基于PSpice的碳化硅金属-氧化物半导体场效应晶体管(SiC MOSFET)行为模型,该模型采用非分段方程拟合器件静态I-U特性和动态C-U特性。通过在模型中引入数学修正项,展现了相关物理效应和温度对器件特性的影响。提出了一种参数提取流程,模型参数提取所用器件测试数据通过SiC MOSFET商用数据手册获得,不需要进行复杂的器件特性测试实验,简化了建模流程。最终通过仿真和双脉冲测试验证了模型的静态和动态特性。结果表明,该模型在预测SiC MOSFET器件行为方面具有足够的精度和效率,为功率变换电路设计提供了一个实用的仿真模型。A PSpice behavior model for silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFET)is developed,which uses non-segmented equations to fit the static I-U and dynamic C-U characteristics of the devices.By introducing mathematical correction terms into the model,the effect of the relevant physical effects and temperature on the device characteristics are shown.A parameter extraction procedure is proposed,and the device test data used for model parameter extraction is obtained through the SiC MOSFET commercial datasheet,which simplifies the modeling process by eliminating the need for complex device characteristic test experiments.The static and dynamic characteristics of the model are finally verified by simulation and double-pulse test.The results show that the model has sufficient accuracy and efficiency in predicting the behavior of SiC MOSFET device,providing a practical simulation model for power conversion circuit design.

关 键 词：晶体管 物理效应 双脉冲测试 

分 类 号：TN32[电子电信—物理电子学]