日盲型AlGaN紫外阵列探测器研制  

Research and fabrication of solar-blind AlGaN UV array detector

作　　者：刘海军 张靖[1] 申志辉[1] 周帅 周建超 姚彬彬 LIU Haijun;ZHANG Jing;SHEN Zhihui;ZHOU Shuai;ZHOU Jianchao;YAO Binbin(Chongqing Optoelectronics Research Institute,Chongqing 400060,China)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《传感器与微系统》2024年第4期72-74,共3页Transducer and Microsystem Technologies

基　　金：国家电网有限公司科技项目资助项目(5700-202018483A-0-0-00)。

摘　　要：针对日盲紫外波段光信号的探测,研制了1 280×1 024/15μm×15μm AlGaN阵列型紫外探测器。像元采用共用N面电极的PIN台面结构,介绍了器件的结构、材料生长和制作工艺,并对器件进行了光电性能测试。结果表明:器件的正向开启电压大于10 V,反向击穿电压大于90 V;0.5 V偏压时单像元暗电流约为0.1 fA,1 V偏压时光谱响应范围为255~282 nm, 270 nm峰值波长响应度约为0.12 A/W。器件实现了日盲紫外成像演示。Aiming at detection of solar-blind UV band optical signal,1280×1024/15μm×15μm AlGaN UV array detector is researched and fabricated.The pixel unit adopts PIN mesa structured with common N-sided electrode.The structure,material growth and manufacturing process of the device are introduced,and the photoelectric performance of the device is tested.The results show that the forward turn on voltage of the device is greater than 10 V,the reverse breakdown voltage is greater than 90 V.The dark current of single pixel is about 0.1 fA at 0.5 V bias voltage.The spectral response range is 255~282 nm and the peak wavelength response of 270 nm is about 0.12 A/W at 1 V bias voltage.The device realizes the demonstration of solar-blind UV imaging.

关 键 词：ALGAN 日盲紫外 阵列探测器 成像 

分 类 号：TN312[电子电信—物理电子学]