4H-SiC晶片热导率的激光拉曼光谱研究  

Laser Raman Spectroscopy Research on Thermal Conductivity of 4H-SiC Wafer

作　　者：任春辉 郭之健 张宇飞 王凯悦[1] REN Chun-hui;GUO Zhi-jian;ZHANG Yu-fei;WANG Kai-yue(School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China)

机构地区：[1]太原科技大学材料科学与工程学院,太原030024

出　　处：《太原科技大学学报》2024年第2期187-192,共6页Journal of Taiyuan University of Science and Technology

基　　金：国家自然科学基金(61705176)。

摘　　要：在本研究中,使用激光激发的激光拉曼光谱研究了4H-SiC晶片从低温(80 K)到室温(290 K)的热导率。在整个测量过程中,激光既作为拉曼光谱的激发源又作为热源,通过激光加热提高了晶片表面的局部温度。同样,拉曼峰的位置会随着晶片温度的升高而向高频侧偏移,通过分析拉曼光谱位置的偏移和局部温度升高的关系得到了4H-SiC晶片的热导率。结果表明,4H-SiC晶片的热导率在低温情况下随温度升高而升高,此时K∝T 3,当热导率的值达到最大后随着温度的升高而降低,此时K∝T-1,这归因于声子-声子间相互作用和声子缺陷散射的作用。In this study,the thermal conductivity of 4H-SiC wafers was investigated from Low temperature(80 K)to room temperature(290 K)using laser Raman spectroscopy with laser excitation.Throughout the measurement process,the laser acts as both an excitation and a heat source for the Raman spectra,raising the local temperature of the wafer surface by laser heating.The thermal conductivity of the 4H-SiC wafer was obtained by analyzing the relationship between the shift in Raman spectral position and the increase in local temperature.The results show that the thermal conductivity of 4H-SiC wafers increases with increasing temperature at low temperatures,when K∝T 3,and decreases with increasing temperature when the thermal conductivity reaches its maximum value,when K∝T-1,which is attributed to phonon-phonon interactions and phonon defect scattering.

关 键 词：4H-SIC 热导率 拉曼光谱 低温 

分 类 号：V254.2[一般工业技术—材料科学与工程]