电子级多晶硅生产中间产品氯硅烷中痕量磷含量检测方法进展  

Progress in the Determination of Trace Phosphorus Content in the Intermediate Product Chlorosilane Produced from Electronic Grade Polysilicon

作　　者：杨晓青 薛心禄 岳峥 李蔚 YANG Xiaoqing;XUE Xinlu;YUE Zheng;LI Wei(Qinghai Core Measurement Technology Co.,Ltd.,Xining 810000,China;Qinghai Key Laboratory of New Energy Materials and Energy Storage Technology,Xining 810000,China)

机构地区：[1]青海芯测科技有限公司,青海西宁810000 [2]青海新能源材料与储能技术重点实验室,青海西宁810000

出　　处：《化工管理》2024年第10期59-61,共3页Chemical Engineering Management

摘　　要：采用改良西门子法在生产电子级多晶硅过程中,精馏中间产物氯硅烷通入多晶硅还原炉,通过氢气还原氯硅烷生产多晶硅,其中氯硅烷中存在的各种形式的磷作为施主杂质,对电子级多晶硅产品质量影响重大。文章系统阐述电子级多晶硅生产中间产品氯硅烷中痕量磷含量的检测方法及研究进展,通过比较各种氯硅烷中痕量磷含量杂质检测方法的优缺点,以供日常检测参考。In the process of producing electronic grade polysilicon by modif ied Siemens process,the intermediate products of rectif ication are fed into a polysilicon reduction furnace to produce polysilicon by hydrogen reduction of chlorosilane,Various forms of phosphorus in chlorosilane as donor impurities have great influence on the quality of electronic grade polysilicon products.This paper systematically expounds the detection methods and research progress of trace phosphorus content in chlorosilane,an intermediate product of electronic grade polysilicon production,and compares the advantages and disadvantages of various impurity detection methods of trace phosphorus content in chlorosilane to provide reference for daily detection.

关 键 词：磷化氢 磷 氯硅烷 多晶硅 

分 类 号：TQ127.2[化学工程—无机化工]