B位空位补偿型钐掺杂PZT(54/46)陶瓷中的缺陷分析及其对压电性能的影响  

Analysis of defects in B-vacancy compensated Sm-doped PZT(54/46)ceramics and their influences on piezoelectric properties

作　　者：杨静 冯少蓉 张涛 牛旭平 王荣 李敏[1] 于润升[3] 曹兴忠[3] 王宝义[3] Yang Jing;Feng Shao-Rong;Zhang Tao;Niu Xu-Ping;Wang Rong;Li Min;Yu Run-Sheng;Cao Xing-Zhong;Wang Bao-Yi(College of Science,Xi’an University of Science and Technology,Xi’an 710600,China;College of Materials Science and Engineering,Xi’an University of Science and Technology,Xi’an 710600,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]西安科技大学理学院,西安710600 [2]西安科技大学材料科学与工程学院,西安710600 [3]中国科学院高能物理研究所,北京100049

出　　处：《物理学报》2024年第7期307-315,共9页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:12075189,11605133,12004300,11974275);中国博士后科学基金(批准号:2018M643813XB);陕西省联合基金重点项目(批准号:2021JML-05)资助的课题。

摘　　要：-用固相反应法制备了B位空位补偿型钐掺杂非准同型相界组分PZT(54/46)陶瓷.通过正电子湮没寿命谱(PALS)和符合多普勒展宽能谱(CDBS)对陶瓷中的缺陷结构进行综合表征,结合常规表征手段如X射线衍射(XRD),电子扫描显微镜(SEM),介电、铁电和压电性能测量,研究缺陷对陶瓷压电性能的影响.XRD结果显示所有陶瓷均为纯钙钛矿相,掺杂诱导了菱方-四方(R-T)相变,准同型相界位于Sm掺杂量x=0.010.02.电学测量结果反映:介电、铁电和压电性能均先增强后减弱,MPB附近两个样品都有优异的介电和铁电性能,但其压电性能差别很大.x=0.01给出最优压电性能d_(33)=572 p C/N,较未掺杂样品增强了一倍.PALS结果表明掺杂使陶瓷中缺陷类型发生变化,x≤0.01,样品中同时含有A位空位与B位空位;x≥0.02,样品中以A位相关缺陷为主,B位空位浓度很低.CDBS结果进一步证实x=0.01和0.02中B位空位浓度分别是该体系中最高和最低的.由以上结果推断出:x=0.01获得的最优压电性能与其中较高浓度的B位空位有关,B位空位可稀释A位空位浓度,降低氧空位浓度,从而降低A位空位与氧空位形成缺陷偶极子的几率,促进畴壁运动,使压电性能增强.Rare earth dopping,especially samarium(Sm)dopping is considered as an effective way to obtain high piezoelectricity by increasing local structure heterogeneity in Pb-containing ABO3 perovskite ceramics.Defects play an significant role in determining piezoelectric properties in aliovalent ion doping systems.In order to obtain an insight into the effect of defects,especially B-site vacancies on piezoelectricity,Sm-doped PZT(54/46)ceramics compensated by B-site vacancies are fabricated by conventional solid state reaction method.The influence of defects on piezoelectric properties is studied by positron annihilation lifetime spectroscopy(PALS),coincidence Doppler broadening spectroscopy(CDBS),and conventional methods such as X-ray diffraction(XRD),scanning electron microscope(SEM),electrical performance testing on dielectricity,ferroelectricity and pizoelectricity.The XRD results show that all ceramics crystallize in a pure perovskite phase,Sm3+doping causes a transformation from the rhombohedral to tetragonal phase and the morphotropic phase boundary(MPB)lies near Sm3+doping content x=0.01–0.02.Electrical performance testing results indicate that with the increase of x,all of the dielectricity,ferroelectricity and pizoelectricity first increase and then decrease,the sample with x=0.01 and 0.02 exhibit similar excellent dielectricity and ferroelectricity,while their pizoelectricity differs greatly,the optimal piezoelectric coefficient d33=572 pC/N(nearly double that of undoped sample)is obtained in the sample with x=0.01.The PALS results show that Sm doping leads the defect types to change from the coexistence of A-site and B-site vacancies for x≤0.01 to mainly A-site related defects for x≥0.02.The CDBS results further verify that the concentration of B-site vacancies is highest for x=0.01 and lowest for x=0.02.It is inferred that the high pizoelectricity for x=0.01 is related to its high concentration of B-site vacancies,which can dilute the number of A-site vacancies and oxygen vacancies,reducing the chance

关 键 词：PZT压电陶瓷 正电子湮没技术 空位缺陷 

分 类 号：TQ174.1[化学工程—陶瓷工业]