基于金属电化学腐蚀的单晶SiC表面腐蚀和磨损性能研究  

Study on Surface Corrosion and Wear Performance of Single-crystal SiC Based on Metal Electrochemical Corrosion

作　　者：胡达 路家斌[1,2] 阎秋生 骆应荣[1,2] 雒梓源 HU Da;LU Jiabin;YAN Qiusheng;LUO Yingrong;LUO Ziyuan(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China;State Key Laboratory for High-Performance Tools,Guangzhou 510006,China)

机构地区：[1]广东工业大学机电工程学院,广东广州510006 [2]高性能工具全国重点实验室,广东广州510006

出　　处：《湖南大学学报（自然科学版）》2024年第4期123-131,共9页Journal of Hunan University:Natural Sciences

基　　金：国家自然科学基金资助项目(52175385);广东省自然科学基金资助项目(2023A1515010923);攀登计划广东大学生科技创新战略专项(pdjh2023a0157)。

摘　　要：针对化学机械抛光中抛光液的环境污染,提出一种基于金属电化学腐蚀的单晶SiC化学机械抛光方法.通过腐蚀实验和摩擦磨损实验,研究了电化学腐蚀单晶SiC的Si面腐蚀性能和磨损性能.通过对比Al、Cu、Fe金属在Na_(2)SO_(4)电解质溶液中对Si面的腐蚀性能,发现Al在Si面产生明显的腐蚀层,EDS和XPS检测证实该腐蚀产物为SiO_(2).采用摩擦磨损实验研究溶液组分对SiC的Si面磨损影响规律.结果表明,提高Na_(2)SO_(4)电解质溶液浓度能获得更大的磨损量,当Na_(2)SO_(4)电解质溶液浓度为1.00 mol/L时,得到最大为7.19µm^(2)的磨损量;在酸性的金属电化学腐蚀溶液中,Si面具有更好的材料去除性能,在pH=3时磨损量达到11.97µm^(2).单晶SiC的金属电化学腐蚀材料去除机制为阴极的Al金属发生电偶腐蚀反应产生腐蚀电流,促使阳极SiC表面氧化生成SiO_(2)氧化层,进而去除材料.Aiming at the environmental pollution of the polishing solution in chemical mechanical polishing,a single-crystal SiC chemical mechanical polishing method based on metal electrochemical corrosion is proposed.The Si surface of single-crystal SiC corrosion performance and wear performance of electrochemically corroded were investigated by corrosion experiments and wear experiments.By comparing the corrosion performance of Al,Cu,and Fe metals on the Si face in a Na_(2)SO_(4)electrolyte solution,it was found that only Al can generate a noticeable corrosion layer.The EDS and XPS analyses of the Si face confirmed that the corrosion is due to the formation of the SiO_(2)layer.Frictional wear experiments were conducted to investigate the influence of solution composition on the wear behavior of Si face.Increasing the concentration of the Na_(2)SO_(4)electrolyte solution resulted in higher wear,with a maximum wear value of 7.19µm^(2)obtained in 1.00 mol/L Na_(2)SO_(4)electrolyte solution.In an acidic corrosive solution,the Si face exhibited the highest material removal,with a wear value of 11.97µm^(2)achieved at pH=3.The material removal mechanism of single-crystal SiC via metal electrochemical corrosion involved the corrosive reaction involving Al at the cathode,which generated a corrosion current,and the subsequent oxidation of the SiC surface at the anode,thereby forming a SiO_(2)oxide layer leading to material removal.

关 键 词：化学机械抛光 单晶SiC 金属电化学腐蚀 腐蚀性能 磨损性能 

分 类 号：TH161[机械工程—机械制造及自动化]