Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)  

作　　者：Fei Sun Yi Peng Guoqiang Zhao Xiancheng Wang Zheng Deng Changqing Jin 

机构地区：[1]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]School of Physics,University of Chinese Academy of Sciences,Beijing 101408,China [3]Center for High Pressure Science and Technology Advanced Research,Beijing 100094,Chin

出　　处：《Journal of Semiconductors》2024年第4期36-41,共6页半导体学报（英文版）

基　　金：supported by Beijing Natural Science Foundation (No. 2212049);NSF of China (No. 11974407);CAS Project for Young Scientists in Basic Research (No. YSBR-030);the Youth Innovation Promotion Association of CAS (No. 2020007)

摘　　要：Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolutions under external pres-sures are required to analyze the mechanisms.Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells.The materials become ferromagnetic with Curie temperature of 105 K after further 20%K doping.The title material undergoes an isostruc-tural phase transition at around 19 GPa.Below the transition pressure,it is remarkable to find lengthening of Zn/Mn-As bond within Zn/MnAs layers,since chemical bonds are generally shortened with applying pressures.Accompanied with the bond stretch,interlayer As-As distances become shorter and the As-As dimers form after the phase transition.With further compres-sion,Zn/Mn-As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.

关 键 词：magnetic semiconductor high-pressure in-situ X-ray diffraction phase transition 

分 类 号：O471[理学—半导体物理]