酸腐蚀工艺对硅片表面粗糙度的影响  

Influence of Acid Etching Process on Wafer Surface Roughness

作　　者：于妍[1] 康洪亮[1] 张贺强[1] 田原[1] YU Yan;KANG Hongliang;ZHANG Heqiang;TIAN Yuan(The 46^(th) Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2024年第2期39-41,70,共4页Equipment for Electronic Products Manufacturing

摘　　要：为了缩减工艺成本,提高硅片表面光泽度,降低表面粗糙度,降低表面金属含量,提高生产效率,对HNO_(3)∶HF∶CH_(3)COOH混合酸体系的反应机理进行了分析,通过改变酸腐蚀去除量,腐蚀液温度等工艺参数可有效控制超薄硅片腐蚀反应速度,降低表面粗糙度,提高表面光泽度。发现去除量达到100μm以后,表面粗糙度可达到0.065μm,同一条件下,腐蚀液温度为45℃时,表面粗糙度最小,反射率最高。In order to reduce process costs,improve the surface glossiness of silicon wafers,reduce surface roughness,lower surface metal content,and improve production efficiency,we analyzed the reaction mechanism of the HNO_(3):HF:CH_(3)COOH mixed acid system.By changing the acid etching process parameters such as corrosion removal amount and corrosion solution temperature,the corrosion reaction rate of ultra-thin silicon wafers can be effectively controlled,surface roughness can be reduced,and surface glossiness can be improved.Discovered removal amount reaching 100μm,the surface roughness can reach 0.065μm.Under the same conditions,when the corrosion solution temperature is 45℃,the surface roughness is the smallest and the reflectivity is the highest.

关 键 词：单晶硅片 酸腐蚀 粗糙度 

分 类 号：TN304.05[电子电信—物理电子学]