压电AlN MEMS的新进展  

New Progress of Piezoelectric AlN MEMS

作　　者：赵正平 Zhao Zhengping(China Electronics Technology Group Corporation,Beijing 100846,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团有限公司,北京100846 [2]固态微波器件与电路全国重点实验室,石家庄050051

出　　处：《微纳电子技术》2024年第4期1-25,共25页Micronanoelectronic Technology

摘　　要：Si基微电子机械系统(MEMS)经过三十余年的发展已进入智能微系统的发展阶段,已成为当今MEMS技术创新发展的主流。当今半导体材料技术的科研已进入超宽禁带半导体的探索开发阶段,超宽禁带半导体AlN不但在功率电子学有较好的前景,而且AlN薄膜具有较好的压电性能,与CMOS工艺相兼容,压电AlN MEMS首先在手机应用的射频谐振器、滤波器方面取得突破,实现量产,近年来压电AlN MEMS已成为MEMS技术创新发展的热点。介绍了压电AlN MEMS在掺杂薄膜材料制备、新器件结构设计、新工艺、可靠性和应用创新等方面的最新进展,包含掺钪AlN薄膜研制、AlN薄膜多层结构、AlScN薄膜性能、AlN薄膜制备;体声波(BAW)谐振器与固体安装谐振器(SMR)、薄膜体声波谐振器(FBAR)和薄膜压电MEMS、轮廓模式谐振器(即兰姆波谐振器)、混合谐振器、AlN压电微机械超声换能器(PMUT)等结构创新;有利于CMOS集成,批量高可靠,压电AlN薄膜的晶圆量产,AlScN器件工艺优化;AlN MEMS热疲劳和抗辐照;谐振器与滤波器、能量收集器、物质和生物传感与检测、指纹传感器、图像器和麦克风、通信、微镜传感、柔性传感等方面研究成果。分析和评价了压电AlN MEMS关键技术进步和发展态势。After the development of more than 30 years,Si-based micro-electromechanical systems(MEMS)have entered the development stage of intelligent micro system,and have become the mainstream of the development of MEMS technology innovation.Today,the research of semiconductor material technology has entered the exploration and development stage of ultra-wide bandgap semiconductors.Ultra-wide bandgap semiconductor AlN has a good prospect in power electronics,and AlN film has good piezoelectric performance,which is compatible with CMOS process.Piezoelectric AlN MEMS firstly have breakthrough in RF resonators and filters for mobile phone applications,and has realized mass production.Piezoelectric AlN MEMS have become the focus of MEMS technology innovation and development.The latest progress of piezoelectric AlN MEMS have been introduced on doped film materials,new device structure design,new process,reliability and application innovation,including scandium doped AlN film,AlN film multilayer structure,AlScN film performance and AlN film preparation;bulk acoustic wave(BAW)resonators and solid-state mounted resonators(SMRs),thin-film bulk acoustic wave resonators(FBARs)and thin-film piezoelectric MEMS,contour mode resonators(Lam wave resonators),hybrid resonators,AlN piezoelectric micromachined ultrasonic transducers(PMUTs)and other structural innovations;beneficial to CMOS integration,high batch reliability,piezoelectric AlN thin film wafer mass production,and AlScN device process optimization;thermal fatigue and radiation resistance of AlN MEMS;resonators and filters,energy harvesters,matter and biological sensing and detection,fingerprint sensors,imagers and microphones,communications,micro-mirror sensing,flexible sensing,etc.The key technology progress and development trend of piezoelectric AlN MEMS are analyzed and evaluated.

关 键 词：微电子机械系统(MEMS) ALN 掺钪AlN薄膜 薄膜体声波谐振器(FBAR) 轮廓模式谐振器 压电微机械超声换能器(PMUT) 

分 类 号：TH703[机械工程—仪器科学与技术]