X波段Si基片集成脊波导MEMS环行器  

X-Band Si Ridge Substrate Integrated Waveguide MEMS Circulator

作　　者：汪蔚[1] 李志东 田松杰 高纬钊 刘博达 Wang Wei;Li Zhidong;Tian Songjie;Gao Weizhao;Liu Boda(The 13^(th) Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2024年第4期156-161,共6页Micronanoelectronic Technology

摘　　要：基于波导传输理论设计并制备了一款Si基片集成脊波导(RSIW)微电子机械系统(MEMS)环行器,该环形器以高阻硅作为衬底材料,采用高精度三维MEMS加工工艺制备而成。通过在基片集成波导(SIW)结构中添加脊梁结构,形成RSIW传输结构,使传输主模TE10模的截止频率比矩形波导TE10模的低,从而实现相同频率下更小的器件尺寸。同时,通过电磁仿真软件对射频匹配和磁场分布进行了精确的建模仿真,完成了Si基片集成脊波导MEMS环行器的仿真设计。制备了尺寸为6 mm×6 mm的环行器样品并进行了测试,结果验证了仿真设计的准确性,其工作频率为8~12 GHz,回波损耗大于20 dB,隔离度大于18 dB,插入损耗小于0.5 dB。实现优良微波特性的同时,相比于常规的SIW结构环行器尺寸缩小了20%左右。A Si ridge substrate integrated waveguide(RSIW)micro-electromechanical system(MEMS)circulator was designed and fabricated based on waveguide transmission theory.High resistance silicon was used as the substrate material and the circulator was fabricated by highprecision 3D MEMS processing technology.By adding a ridge structure onto the substrate integrated waveguide(SIW)structure,a RSIW transmission structure was formed to make the cutoff frequency of the dominant mode TE10 in it lower than that in the rectangular waveguide,thereby achieving smaller device size at the same frequency.Meanwhile,RF matching and magnetic field distribution were precisely modeled and simulated by electromagnetic simulation software.The simulation design of the Si RSIW MEMS circulator was completed.The circulator sample with a size of 6 mm×6 mm was prepared and measured.The results show that the circulator has an operating frequency of 8-12 GHz,a return loss of more than 20 dB,an isolation of more than 18 dB,and an insertion loss of less than 0.5 dB,which verifies the accuracy of the simulation design.The circulator is about 20%smaller than the one with conventional SIW structure while achieving excellent microwave characteristics.

关 键 词：微电子机械系统(MEMS) 环行器 基片集成脊波导(RSIW) 高阻硅 脊梁结构 

分 类 号：TH703[机械工程—仪器科学与技术] TN621[机械工程—精密仪器及机械]