E1310P和FMEE复配对铜膜CMP性能的影响  

Effect of E1310P and FMEE Combination on the Performance of Copper Film CMP

作　　者：孙纪元 周建伟 罗翀 田雨暄 李丁杰 杨云点 盛媛慧 Sun Jiyuan;Zhou Jianwei;Luo Chong;Tian Yuxuan;Li Dingjie;Yang Yundian;Sheng Yuanhui(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China;Semiconductor Technology Innovation Center(Beijing)Corporation,Beijing 100176,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]北方集成电路技术创新中心(北京)有限公司,北京100176

出　　处：《微纳电子技术》2024年第4期187-195,共9页Micronanoelectronic Technology

基　　金：国家自然科学基金(62074049)。

摘　　要：针对化学机械抛光(CMP)中传统唑类缓蚀剂毒性强、成本高,在表面形成坚硬钝化膜难以去除等问题,在甘氨酸-双氧水体系下,使用阴离子表面活性剂聚氧乙烯醚磷酸酯(E1310P)和非离子表面活性剂脂肪酸甲酯乙氧基化物(FMEE)复配替代传统唑类缓蚀剂。通过去除速率、表面粗糙度和表面形貌等的实验结果研究了E1310P和FMEE协同作用对CMP过程中表面质量的影响。通过表面张力、电化学性能、X射线光电子能谱(XPS)和密度泛函理论(DFT)揭示了E1310P和FMEE的协同吸附行为及其机理。结果表明,E1310P可以吸附在Cu的表面,降低Cu的去除速率;FMEE的加入能有效屏蔽E1310P离子头基间的电性排斥作用,使更多的E1310P吸附在Cu的表面,在协同作用下形成了更致密的抑制膜,使得CMP抛光性能得以提升。In response to the strong toxicity,high cost,and difficulty in removing the hard passivation film formed on the surface of conventional azole inhibitor in chemical mechanical polishing(CMP),a combination of anionic surfactant polyoxyethylene ether phosphate(E1310P)and non-ionic surfactant fatty acid methyl ester ethoxylate(FMEE)was used in the glycine hydrogen peroxide system to replace conventional azole inhibitors.The synergistic effect of E1310P and FMEE on the surface quality during CMP process was studied through experimental results such as removal rate,surface roughness and surface morphology.The synergistic adsorption behavior and mechanism of E1310P and FMEE were revealed through surface tension,electrochemical performance,X-ray photoelectron spectroscopy(XPS)and density functional theory(DFT).The results indicate that E1310P can be adsorbed on the surface of Cu to decrease the Cu removal rate,and the addition of FMEE can effectively shield the electrical repulsion between the E1310P ion head groups,allowing more E1310P to be adsorbed on the Cu surface,forming a denser inhibitory film under the synergistic effect and improving the CMP polishing performances.

关 键 词：化学机械抛光(CMP) 去除速率 协同吸附 表面质量 密度泛函理论(DFT) 

分 类 号：TN305.2[电子电信—物理电子学]