基于石墨嵌入式结构的SiC功率模块热仿真与优化  

Thermal simulation and optimization of a SiC power module based on graphite-embedded structure

作　　者：王广来 汪涵 倪艳 蔡苗[1] 杨道国[1] WANG Guanglai;WANG Han;NI Yan;CAI Miao;YANG Daoguo(School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin 541004,Guangxi Zhuang Autonomous Region,China)

机构地区：[1]桂林电子科技大学机电工程学院,广西桂林541004

出　　处：《电子元件与材料》2024年第3期270-276,共7页Electronic Components And Materials

基　　金：国家自然科学基金(6226403);广西自然科学基金(2023GXNSFAA026188)。

摘　　要：SiC器件相比于Si器件,具有更高的功率密度,表现出高的器件结温和热阻。为了提高SiC功率模块的散热能力,提出了一种基于石墨嵌入式叠层DBC的SiC功率模块封装结构,并建立封装体模型。通过ANSYS有限元软件,对石墨层厚度、铜层厚度和导热铜柱直径进行分析,研究各因素对散热性能的影响,并对封装结构进行优化以获得更好的热性能。仿真结果表明,石墨嵌入式封装结构结温为61.675℃,与传统单层DBC封装相比,结温降低19.32%,热阻降低27.05%。各影响因素中石墨层厚度对封装结温和热阻影响最大,其次是铜柱直径和铜层厚度。进一步优化后,结温降低了2.1%,热阻降低了3.4%。此封装结构实现了优异的散热性能,为高导热石墨在功率模块热管理中的应用提供参考。Compared to silicon,SiC devices have higher power density and exhibit higher device junction temperature and thermal resistance.To enhance its thermal dissipation capability,a packaging structure of SiC power module was proposed based on graphite-embedded layered DBC,whose packaging model was also established.The graphite layer thickness,copper layer thickness and thermal conductive copper column diameter were analyzed with ANSYS software to understand their effects on the heat dissipation performance,and the packaging structure was optimized to obtain better thermal performance.The simulation results show that the junction temperature of the graphite embedded packaging structure is 61.675℃,which is reduced by 19.32%from traditional single-layer DBC packaging with thermal resistance decreased by 27.05%.Among the influential factors,the graphite layer thickness has the most significant impact on the packaging junction temperature and thermal resistance.Copper pillar diameter and copper layer thickness are the second and the third influential factors respectively.After optimization,the junction temperature is reduced by 2.1%,and the thermal resistance decreases by 3.4%.Therefore,the packaging structure could achieve excellent thermal performance and provides a reference for the application of high thermal conductivity graphite in the thermal management of power modules.

关 键 词：SiC功率模块 石墨 封装 热仿真 结构优化 

分 类 号：TN605[电子电信—电路与系统]