SOP8功率MOSFET结壳热阻与封装可靠性研究  

Research on junction-to-case thermal resistance and package reliability of SOP8 power MOSFET

作　　者：何成刚 朱岚涤 陈胜全 农百乐 刘吉华 HE Chenggang;ZHU Landi;CHEN Shengquan;NONG Baile;LIU Jihua(School of Rail Transportation,Wuyi University,Jiangmen 529020,Guangdong Province,China;Foshan Irobot Automatic Co.,Ltd.,Foshan 528231,Guangdong Province,China)

机构地区：[1]五邑大学轨道交通学院,广东江门529020 [2]佛山市艾乐博机器人股份有限公司,广东佛山528231

出　　处：《电子元件与材料》2024年第3期359-366,共8页Electronic Components And Materials

基　　金：广东省普通高校特色创新项目(2023KTSCX151);广东省基础与应用基础研究基金项目(2019A1515110807);五邑大学高层次人才科研计划项目(AG2018001)。

摘　　要：为研究SOP8双MOS芯片结壳热阻与封装可靠性,建立了封装芯片模型。运用有限元软件通过构建热-结构模块仿真了在EME-E115与CEL-1702HF两种塑封材料下的芯片结壳热阻情况,分析了热量在封装芯片内部的主要传递路径。对比分析了两种塑封仿真下塑封料外壳体、MOSFET、引线框架的变形与应力情况,研究了粘接层厚度变化对MOSFET最大等效应力的影响。研究结果表明,在SOP8双MOS芯片的内部,热量主要是沿着引线框架基板向塑封料底部进行传递。粘接焊料增厚50μm,MOSFET结温增幅未超过0.1℃,结温点到塑封料底面中心的热阻升高约1.3℃·W^(-1)。相比于EME-E115塑封料,使用CEL-1702HF塑封料进行封装仿真时,可使功率MOSFET的结壳热阻降低约20%,且芯片封装体在变形、应力方面均具有明显优势。增大粘接焊料的厚度可以有效减小MOSFET的应力。EME-E115与CEL-1702HF塑封下的MOSFEF最大等效应力在粘接焊料厚度分别超过40μm和50μm后均出现了返升的仿真结果。A chip packaging model was established to investigate the thermal resistance and package reliability of SOP8 dual MOS chip.By using finite element software,the thermal resistance of the chip crust under two plastic packaging materials,namely EME-E115 and CEL-1702HF,was simulated by constructing thermal structure module,and the main heat transfer paths in the chip were analyzed.The deformation and stress of the outer shell,MOSFET and lead frame were compared and analyzed under two types of plastic packaging simulation.The thickness variation of bonding solder was studied to understand its effect on the maximum equivalent stress of MOSFET.The results show that the heat transfer is mainly along the lead frame substrate to the bottom of the plastic-packaging material in the SOP8 dual MOS chip.After thickening the solder to 50μm,the junction temperature variation of the MOSFET does not exceed 0.1℃,and the thermal resistance from the junction to the central bottom surface of the plastic packaging material increases by about 1.3℃·W^(-1).Compared with EME-E115,CEL-1702HF can reduce the thermal resistance of MOSFET by about 20%according to simulation.The chip packaging has obvious advantages to resist deformation and stress.Thicker bonding solder can effectively reduce the stress of MOSFET.The maximum equivalent stress of the MOSFET under the plastic package of EME-E115 and CEL-1702HF is shown to rise when the thickness of bonding solder exceeds 40μm and 50μm respectively.

关 键 词：SOP8封装 MOSFET 热阻 热应力 

分 类 号：TN306[电子电信—物理电子学]