SOI晶体管和电路的瞬时电离辐射效应研究  

Transient radiation response of SOI transistors and SOI devices

作　　者：杜川华[1] 段丙皇 熊涔 曾超[1] DU Chuanhua;DUAN Binghuang;XIONG Cen;ZENG Chao(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China)

机构地区：[1]中国工程物理研究院电子工程研究所,绵阳621900

出　　处：《核技术》2024年第4期66-72,共7页Nuclear Techniques

基　　金：国家自然科学青年基金(No.12005200)资助。

摘　　要：基于全介质隔离的绝缘硅(Silicon-on-insulator,SOI)器件与体硅器件的瞬时电离辐射效应存在差异,采用1 064 nm/12 ns激光装置开展了三种SOI晶体管的激光辐照试验,测试了不同激光能量下的晶体管光电流;采用脉冲γ射线辐射源开展了SOI集成电路的瞬时γ剂量率辐射试验,测试了不同剂量率条件下的电路功能、电参数和触发器链状态。研究表明:在相同激光能量条件和相同特征尺寸条件下,SOI晶体管的光电流峰值约为体硅晶体管的3.5%;SOI集成电路在1.0×10^(9)~4.2×10^(11) rad(Si)·s^(-1)的试验剂量率范围内无闭锁效应,但存在显著的翻转效应,表现为功能短暂中断、电流和电压波动以及大量触发器状态错误。翻转效应的主要原因包括晶体管本身的翻转和印刷电路板(Printed Circuit Board,PCB)板级电路的电压波动。[Background]Laser simulation technology is widely used in the research of transient ionizing radiation effects in semiconductor devices.Fully dielectrically isolated silicon-on-insulator(SOI)devices exhibit different responses to dose-rate gamma irradiation compared to bulk-Si devices.[Purpose]This study aims to examine the photocurrents of both Si-based and SOI NMOS transistors,and investigate the performance of a SOI MCU with varying dose rates.[Method]An irradiation experiment was conducted on three types of transistors by using a 1064 nm/12 ns laser device,and the photocurrent was tested under various laser energies.A pulsedγ-ray source was employed to perform the transientγdose rate radiation test on an SOI-integrated circuit.The function,electrical parameters,and flipflop chain status of the SOI-integrated circuit under different dose rates were measured.Based on theoretical model for the generation of photocurrent in SOI transistor,the dose-rate threshold for logic flipping and corresponding critical charge were estimated based on theoretical model for the generation of photocurrent in SOI transistor.[Results]The results indicate that the peak photocurrent of the SOI transistor is approximately 20 times lower than that of the bulk silicon transistor with the same feature size under identical irradiation conditions.This reduction is attributed to the decreased charge collection sensitive area of the SOI transistor.Within a dose rate range from 1.0×10^(9)~4.2×10^(11) rad(Si)·s^(-1),the SOI-integrated circuit exhibites no latch-up effect.However,irradiation-induced upsets are observed in the SOI-integrated circuit.[Conclusions]These upsets caused by transient radiation effects manifest as transient functional interruptions,variations in operating current and voltage,and erroneous flip-flop statuses.These irradiation-induced upsets in the SOI-integrated circuit are likely attributable to,among other factors,transistor upsets and circuit-level voltage fluctuations on printed circuit board.

关 键 词：SOI晶体管 微控制器 瞬时电离辐射效应 光电流 

分 类 号：TN386.1[电子电信—物理电子学]