CMP工艺参数对AlGaInP基LED衬底转移的影响  

Effect of CMP process parameters on the substrate transfer of AlGaInP-based LEDs

作　　者：王嘉伟 许英朝 杨凯[3] 鹿晨东 范浩爽 陆逸 WANG Jiawei;XU Yingchao;YANG Kai;LU Chendong;FAN Haoshuang;LU Yi(School of Optoelectronics and Communication Engineering,Xiamen University of Technology,Xiamen Fujian 361024,China;Fujian Key Laboratory of Optoelectronic Technology and Devices,Xiamen University of Technology,Xiamen Fujian 361024,China;Xiamen Silan Advanced Compound Semiconductor Co.,Ltd,Xiamen Fujian 361024,China)

机构地区：[1]厦门理工学院光电与通信工程学院,福建厦门361024 [2]厦门理工学院光电技术与器件福建省重点实验室,福建厦门361024 [3]厦门士兰明镓化合物半导体有限公司,福建厦门361024

出　　处：《激光杂志》2024年第3期224-229,共6页Laser Journal

基　　金：福建省自然科学基金面上项目(No.2019J01876);厦门市科技计划重大项目(No.3502ZCQ20191002)。

摘　　要：以GaP/Al2O3/SiO2引导式出光结构作为芯片键合层,通过化学机械抛光工艺减少AlGaInP基Mini-LED衬底转移过程中出现的外延层空洞,提高芯片制备工艺良率。以材料去除速率和表面粗糙度作为技术评价指标,基于单因素实验结果对抛光压力、抛光头转速、抛光盘转速、抛光液流速四个影响化学机械抛光工艺的因素展开L9(34)的正交实验,实验结果表明:在抛光头转速75 r/min、抛光盘转速80 r/min、抛光压力8 kPa、抛光液流速100 mL/min条件下,材料去除速率为83.12 nm/min,表面粗糙度最低为0.477 nm,采用优化后的工艺条件能够获得高质量的GaAs键合表面,有效减少外延空洞,提高制备良率。In this paper,the GaP/Al2O3/SiO2 guided light-emitting structure is used as the bonding layer of the chip,and the chemical mechanical polishing process is introduced to reduce the epitaxial voids in the transfer process of AlGaInP-based Mini-LED substrates to improve the chip preparation process yields.Using material removal rate and surface roughness as technical evaluation indexes,L9(34)orthogonal experiments were conducted based on the results of single-factor experiments on polishing pressure,polishing head speed,polishing plate speed,and polishing fluid flow rate.The experimental results show that the material removal rate is 83.12 nm/min and the surface roughness is as low as 0.477 nm under the conditions of polishing head speed 75 rpm,polishing plate speed 80 rpm,polishing pressure 8 kPa and polishing fluid flow rate 100 mL/min.The optimized process conditions can obtain high quality GaAs bonding surfaces,effectively reduce epitaxial voids,and improve preparation yields.

关 键 词：化学机械抛光工艺 ALGAINP 正交试验 表面粗糙度 良率 

分 类 号：TN209.11[电子电信—物理电子学]