α-Fe_(2)O_(3)纳米棒的水热合成与阻变开关特性研究  

Hydrothermal synthesis and resistive switching behaviour ofα-Fe_(2)O_(3) nanorods

作　　者：徐佳敏 余志强 韩旭[1] 陈诚 曲信儒 黄庆南 XU Jiamin;YU Zhiqiang;HAN Xu;CHEN Cheng;QU Xinru;HUANG Qingnan(School of Automation,Guangxi University of Science and Technology,Liuzhou 545616,China;School of Electronic Engineering,Guangxi University of Science and Technology,Liuzhou 545616,China;School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan National Laboratory for Optoelectronics(Huazhong University of Science and Technology),Wuhan 430074,China)

机构地区：[1]广西科技大学自动化学院,广西柳州545616 [2]广西科技大学电子工程学院,广西柳州545616 [3]华中科技大学光学与电子信息学院,湖北武汉430074 [4]武汉光电国家研究中心(华中科技大学),湖北武汉430074

出　　处：《广西科技大学学报》2024年第2期128-135,共8页Journal of Guangxi University of Science and Technology

基　　金：国家自然科学基金项目(61805053);广西科技基地和人才专项项目(AD19110038);广西科技大学博士基金项目(19Z07);广西研究生教育创新计划项目(YCSW2021135)资助。

摘　　要：采用水热法合成了沿[110]方向具有优先生长取向的α-Fe_(2)O_(3)纳米棒,设计了具有非易失性阻变开关性能的W/α-Fe2O_(3)/FTO阻变存储器。对W/α-Fe_(2)O_(3/)FTO器件的阻变开关特性进行分析发现,W/α-Fe_(2)O_(3)/FTO阻变存储器的电阻比(RHRS/RLRS)在一个数量级以上,可保持100 s以上而无明显下降。此外,器件的载流子运输特性分别由LRS下的欧姆传导机制和HRS下的陷阱控制的空间电荷限制电流传导机制决定。由氧空位的迁移引起的纳米导电细丝的部分形成与断裂可以解释W/α-Fe_(2)O_(3)/FTO阻变存储器的非易失性阻变开关行为。因此,基于α-Fe_(2)O_(3)纳米棒的阻变存储器件可能是下一代非易失性存储应用的潜在候选器件。α-Fe_(2)O_(3) nanorods with preferential growth orientation along the direction[110]were synthesized by hydrothermal method,and W/α-Fe_(2)O_(3)/FTO resistant memory with non-volatile resistive switching performance was prepared.It is found that the resistance ratio(RHRS/RLRS)of W/α-Fe_(2)O_(3)/FTO memory is about one order of magnitude and can be kept above 100 s without obvious decrease.In addition,the carrier transport characteristics of the device are determined by the ohmic conduction mechanism under the LRS and the trap-controlled space charge-limited current conduction mechanism under the HRS,respectively.The partial formation and fracture of nano conductive filaments caused by oxygen vacancy migration can explain the nonvolatile resistive switching behavior of W/α-Fe_(2)O_(3)/FTO resistive memory.Therefore,resistive memory devices based onα-Fe_(2)O_(3) nanorods may be potential candidates for the next generation of non-volatile memory applications.

关 键 词：α-Fe_(2)O_(3)纳米棒 非易失性 氧空位 导电细丝 

分 类 号：TN304.205[电子电信—物理电子学]