GaAs基高性能MEMS微波功率检测芯片  

A GaAs-Based High Performance MEMS Microwave Power Chip

作　　者：朱越 王德波[1] ZHU Yue;WANG Debo(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,P.R.China)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023

出　　处：《微电子学》2024年第1期134-140,共7页Microelectronics

基　　金：国家自然科学青年基金资助项目(61704086);中国博士后科学基金资助项目(2017M621692);江苏省博士后基金资助项目(1701131B);南京邮电大学国自基金孵化资助项目(NY215139,NY217039)。

摘　　要：为了提高电容式MEMS微波功率检测芯片的性能,设计了一种GaAs基高性能MEMS微波功率传感芯片。通过建立双导固支梁电容模型,分析了传感芯片的传输特性、过载功率与灵敏度特性。在双导固支梁电容模型中提出了平行极板的两个等效条件;同时提出了一种新的梁宽等效方式,解决了双梁结构等效梁宽的失配问题,减小了模型的相对误差。双导固支梁电容模型很好地解释了导向梁的厚长比与初始高度对传感器过载功率和灵敏度的影响。测试结果表明,双导固支梁MEMS微波功率传感芯片在200 mW输入功率内的灵敏度为14.3 fF/W,而灵敏度的理论值为13.5 fF/W,两者的相对误差仅5.6%。因此,该理论模型对固支梁MEMS微波功率传感芯片的设计具有一定的借鉴意义。In order to improve the performance of capacitive MEMS microwave power chip,a novel high performance MEMS microwave power chip was designed.By establishing a dual-guided clamped beam capacitance model,the transmission characteristics,overload power and sensitivity characteristics of the sensor were analyzed.Two equivalent conditions were proposed for the parallel plates in the dual-guided clamped beam capacitance model.At the same time,a new beam width equivalent method was proposed to solve the mismatch problem of the equivalent beam width of the dual-guided structure,reducing the relative error of the model.The dual-guided clamped beam capacitance model explained the impact of the thickness to length ratio and initial height of the guide beam on the overload power and sensitivity of the sensor.The test results show that the sensitivity of the dual-guided clamped beam MEMS microwave power sensor is 14.3 fF/W within 200 mW input power,while the theoretical value of sensitivity is 13.5 fF/W with a relative error of only 5.6%.Therefore,this theoretical model has certain reference significance for the design of clamped beam MEMS microwave power sensors.

关 键 词：MEMS 功率检测芯片 固支梁 双梁 等效梁宽 

分 类 号：TN62[电子电信—电路与系统] TP212[自动化与计算机技术—检测技术与自动化装置]