一种双靶磁控溅射制备的Mg掺杂的NiO薄膜  

A Mg-Doped NiO Thin Film Fabricated by Magnetron Sputtering Method Using Double Targets

作　　者：王新[1] 丛凡超 罗明海 WANG Xin;CONG Fanchao;LUO Minghai(School of Physics,Changchun University of Science and Technology,Changchun 130022,P.R.China)

机构地区：[1]长春理工大学物理学院,长春130022

出　　处：《微电子学》2024年第1期145-148,共4页Microelectronics

基　　金：吉林省科技发展计划项目(20220101036JC);国家自然科学基金资助项目(11874091)。

摘　　要：采用磁控溅射“共溅射”方法,将Ar气作为溅射气体,高纯NiO和MgO双陶瓷靶作为溅射靶材。当控制NiO和MgO靶的溅射功率分别为190 W和580 W,溅射真空度为2 Pa,衬底温度为300℃时,得到了Mg掺杂的NiO(Ni_(0.61)Mg_(0.39)O)薄膜。该薄膜是一种具有(200)择优取向的晶态薄膜。薄膜表面比较平整,晶粒分布致密,晶粒尺寸约46.9 nm。(200)衍射峰位置相对未掺杂的NiO薄膜向小角度偏移约0.2°。合金薄膜在可见光波段具有较大的透过率,而在300 nm附近透过率陡然下降,其光学带隙向高能方向移动到了3.95 eV。该研究为采用磁控溅射制备高质量的Mg掺杂的NiO薄膜提供了技术支撑。Mg-doped NiO(Ni_(0.61)Mg_(0.39)O)thin films were fabricated by using magnetron sputtering"co-sputtering"method.Ar gas was used as the sputtering gas,high-purity NiO and MgO double ceramic targets were used as the sputtering target.The sputtering power of NiO and MgO target was controlled at 190 W and 580 W respectively,the sputtering vacuum degree was kept 2 Pa,and the substrate temperature was kept at 300℃.The obtained thin film was a crystalline film with(200)preferred orientation.The surface was relatively flat and the distribution of the grains was dense.The grain size of the film was about 46.9 nm,and the diffraction peak position of(200)was shifted to small angle of about 0.2°compared with that of the undoped NiO film.The film had a high transmittance in the visible light region,but the transmittance dropped sharply near 300 nm.The optical bandgap of the film moved to 3.95 eV towards higher energy direction.It provides technical support for the fabrication of high quality Mg-doped NiO thin films using magnetron sputtering co-sputtering method.

关 键 词：磁控溅射 共溅射 Mg掺杂的NiO薄膜 带隙 

分 类 号：TN304[电子电信—物理电子学]